Characteristics of fluorinated amorphous carbon films and implementation of 0.15 μm Cu/a-C:F damascene interconnection

Jia Min Shieh; Shich Chang Suen; Kou Chiang Tsai; Bau Tong Dai; Yew-Chuhg Wu; Yu Hen Wu

doi:10.1116/1.1362683

Characteristics of fluorinated amorphous carbon films and implementation of 0.15 μm Cu/a-C:F damascene interconnection

Jia Min Shieh^*, Shich Chang Suen, Kou Chiang Tsai, Bau Tong Dai, Yew-Chuhg Wu, Yu Hen Wu

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

15 Scopus citations

Abstract

The fluorinated amorphous carbon films (a-C:F) films deposited by plasma enhanced chemical vapor deposition (PECVD) achieved a low-dielectric constant and high thermal stability by analyzing film characteristics of a-C:F. Implementation of damascene pattern with 0.15 μm and an etching selectivity of more than 50 (a-C:F/SiOF, SiO₂ was done using a mixture of N₂+O₂ gases. It was shown by scanning electron microscope results that a better etch profile could be obtained at higher bias power. The etching stop layer or hard mask of both SiOF and SiO₂ was studied in the damascene architecture.

Original language	American English
Pages (from-to)	780-787
Number of pages	8
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.1362683
State	Published - 1 May 2001
Event	13th International Vaccum Microelectronics Conference - Guangzhou, China Duration: 14 Aug 2000 → 17 Aug 2000

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title = "Characteristics of fluorinated amorphous carbon films and implementation of 0.15 μm Cu/a-C:F damascene interconnection",

abstract = "The fluorinated amorphous carbon films (a-C:F) films deposited by plasma enhanced chemical vapor deposition (PECVD) achieved a low-dielectric constant and high thermal stability by analyzing film characteristics of a-C:F. Implementation of damascene pattern with 0.15 μm and an etching selectivity of more than 50 (a-C:F/SiOF, SiO2 was done using a mixture of N2+O2 gases. It was shown by scanning electron microscope results that a better etch profile could be obtained at higher bias power. The etching stop layer or hard mask of both SiOF and SiO2 was studied in the damascene architecture.",

author = "Shieh, {Jia Min} and Suen, {Shich Chang} and Tsai, {Kou Chiang} and Dai, {Bau Tong} and Yew-Chuhg Wu and Wu, {Yu Hen}",

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journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

note = "13th International Vaccum Microelectronics Conference ; Conference date: 14-08-2000 Through 17-08-2000",

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Characteristics of fluorinated amorphous carbon films and implementation of 0.15 μm Cu/a-C:F damascene interconnection. / Shieh, Jia Min; Suen, Shich Chang; Tsai, Kou Chiang et al.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 3, 01.05.2001, p. 780-787.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Characteristics of fluorinated amorphous carbon films and implementation of 0.15 μm Cu/a-C:F damascene interconnection

AU - Shieh, Jia Min

AU - Suen, Shich Chang

AU - Tsai, Kou Chiang

AU - Dai, Bau Tong

AU - Wu, Yew-Chuhg

AU - Wu, Yu Hen

PY - 2001/5/1

Y1 - 2001/5/1

N2 - The fluorinated amorphous carbon films (a-C:F) films deposited by plasma enhanced chemical vapor deposition (PECVD) achieved a low-dielectric constant and high thermal stability by analyzing film characteristics of a-C:F. Implementation of damascene pattern with 0.15 μm and an etching selectivity of more than 50 (a-C:F/SiOF, SiO2 was done using a mixture of N2+O2 gases. It was shown by scanning electron microscope results that a better etch profile could be obtained at higher bias power. The etching stop layer or hard mask of both SiOF and SiO2 was studied in the damascene architecture.

AB - The fluorinated amorphous carbon films (a-C:F) films deposited by plasma enhanced chemical vapor deposition (PECVD) achieved a low-dielectric constant and high thermal stability by analyzing film characteristics of a-C:F. Implementation of damascene pattern with 0.15 μm and an etching selectivity of more than 50 (a-C:F/SiOF, SiO2 was done using a mixture of N2+O2 gases. It was shown by scanning electron microscope results that a better etch profile could be obtained at higher bias power. The etching stop layer or hard mask of both SiOF and SiO2 was studied in the damascene architecture.

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U2 - 10.1116/1.1362683

DO - 10.1116/1.1362683

M3 - Conference article

AN - SCOPUS:0035326480

SN - 1071-1023

VL - 19

SP - 780

EP - 787

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

T2 - 13th International Vaccum Microelectronics Conference

Y2 - 14 August 2000 through 17 August 2000

ER -

Characteristics of fluorinated amorphous carbon films and implementation of 0.15 μm Cu/a-C:F damascene interconnection

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