Characteristics of flexible and transparent Eu₂O₃ resistive switching memory at high bending condition

Keyphrases

• Bending Condition 100%
• Resistive Random Access Memory (ReRAM) 100%
• Resistive Switching 100%
• Eu2O3 100%
• Electrical Characteristics 50%
• Bottom Electrode 50%
• Freeform 50%
• Dielectric Layer 50%
• Memory Window 50%
• Memory Device 50%
• Oxide Layer 50%
• Low Resistance State 50%
• High Resistance State 50%
• Conduction Mechanism 50%
• Interlayer Resistance 50%
• Flexible Devices 50%
• Aluminum-doped Zinc Oxide 50%
• Flexible Memory 50%
• Ohmic Conduction 50%
• ITO-PET 50%
• Device Area 50%
• Bending Radius 50%
• Poole-Frenkel Mechanism 50%
• Transparent Memory 50%

Material Science

• Indium Tin Oxide 100%
• Electrical Property 50%
• Zinc Oxide 50%
• Aluminum 50%
• Dielectric Material 50%

Engineering

• Resistive 100%
• Dielectric Layer 25%
• Oxide Layer 25%
• High Resistance State 25%
• Aluminium-Doped Zinc Oxide 25%
• Ohmic Conduction 25%
• Bending Radius 25%