Characteristics of deep levels in As-implanted GaN films

L. Lee; W. C. Lee; H. M. Chung; M. C. Lee; W. H. Chen; Wei-Kuo Chen; H. Y. Lee

doi:10.1063/1.1499739

Characteristics of deep levels in As-implanted GaN films

L. Lee^*, W. C. Lee, H. M. Chung, M. C. Lee, W. H. Chen, Wei-Kuo Chen, H. Y. Lee

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Hall, current-voltage and deep level transient spectroscopy measurements were used to characterize the electric properties of n-type GaN films implanted with As atoms. After 800°C thermal annealing for 60 min, one additional deep level located at E_C-0.766eV was found in the films. We presume this induced trap is an arsenic-related point defect, most likely antisite in nature.

Original language	English
Pages (from-to)	1812-1814
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	10
DOIs	https://doi.org/10.1063/1.1499739
State	Published - 2 Sep 2002

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title = "Characteristics of deep levels in As-implanted GaN films",

abstract = "Hall, current-voltage and deep level transient spectroscopy measurements were used to characterize the electric properties of n-type GaN films implanted with As atoms. After 800°C thermal annealing for 60 min, one additional deep level located at EC-0.766eV was found in the films. We presume this induced trap is an arsenic-related point defect, most likely antisite in nature.",

author = "L. Lee and Lee, {W. C.} and Chung, {H. M.} and Lee, {M. C.} and Chen, {W. H.} and Wei-Kuo Chen and Lee, {H. Y.}",

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AU - Chung, H. M.

AU - Lee, M. C.

AU - Chen, W. H.

AU - Chen, Wei-Kuo

AU - Lee, H. Y.

PY - 2002/9/2

Y1 - 2002/9/2

N2 - Hall, current-voltage and deep level transient spectroscopy measurements were used to characterize the electric properties of n-type GaN films implanted with As atoms. After 800°C thermal annealing for 60 min, one additional deep level located at EC-0.766eV was found in the films. We presume this induced trap is an arsenic-related point defect, most likely antisite in nature.

AB - Hall, current-voltage and deep level transient spectroscopy measurements were used to characterize the electric properties of n-type GaN films implanted with As atoms. After 800°C thermal annealing for 60 min, one additional deep level located at EC-0.766eV was found in the films. We presume this induced trap is an arsenic-related point defect, most likely antisite in nature.

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VL - 81

SP - 1812

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JO - Applied Physics Letters

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Characteristics of deep levels in As-implanted GaN films

Abstract

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