Abstract
Hall, current-voltage and deep level transient spectroscopy measurements were used to characterize the electric properties of n-type GaN films implanted with As atoms. After 800°C thermal annealing for 60 min, one additional deep level located at EC-0.766eV was found in the films. We presume this induced trap is an arsenic-related point defect, most likely antisite in nature.
Original language | English |
---|---|
Pages (from-to) | 1812-1814 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 81 |
Issue number | 10 |
DOIs | |
State | Published - 2 Sep 2002 |