Characteristics of deep levels in As-implanted GaN films

L. Lee*, W. C. Lee, H. M. Chung, M. C. Lee, W. H. Chen, Wei-Kuo Chen, H. Y. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Hall, current-voltage and deep level transient spectroscopy measurements were used to characterize the electric properties of n-type GaN films implanted with As atoms. After 800°C thermal annealing for 60 min, one additional deep level located at EC-0.766eV was found in the films. We presume this induced trap is an arsenic-related point defect, most likely antisite in nature.

Original languageEnglish
Pages (from-to)1812-1814
Number of pages3
JournalApplied Physics Letters
Issue number10
StatePublished - 2 Sep 2002


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