Characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers

Tien-Chang Lu*, Tzeng Tsong Wu, Shih Wei Chen, Po Min Tu, Zhen Yu Li, Chien Kang Chen, Cheng-Huan Chen, Hao-Chung Kuo, Shing Chung Wang, Hsiao-Wen Zan, Chun-Yen Chang

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

33 Scopus citations


This paper reviews the fabrication technology and performance characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) with hybrid distributed Bragg reflectors (DBRs). The GaN-based VCSEL consists of a ten-pair Ta 2O 5/SiO 2 top DBR, a 7λ-thick optical cavity embedded with 10 InGaN/GaN multiquantum wells, and a 29-pair AlN/GaN bottom DBR. Lasing action is observed under continuous-wave operation at room temperature. The laser characteristics, such as temperature-dependent laser threshold current, emission wavelength, and spontaneous emission coupling factors, have been measured and discussed.

Original languageEnglish
Article number5752264
Pages (from-to)1594-1602
Number of pages9
JournalIEEE Journal on Selected Topics in Quantum Electronics
Issue number6
StatePublished - Nov 2011


  • Distributed Bragg reflectors (DBRs)
  • GaN
  • vertical-cavity surface-emitting laser (VCSEL)


Dive into the research topics of 'Characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers'. Together they form a unique fingerprint.

Cite this