Characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers

Tien-Chang Lu; Tzeng Tsong Wu; Shih Wei Chen; Po Min Tu; Zhen Yu Li; Chien Kang Chen; Cheng-Huan Chen; Hao-Chung Kuo; Shing Chung Wang; Hsiao-Wen Zan; Chun-Yen Chang

doi:10.1109/JSTQE.2011.2116771

Characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers

Tien-Chang Lu^*, Tzeng Tsong Wu, Shih Wei Chen, Po Min Tu, Zhen Yu Li, Chien Kang Chen, Cheng-Huan Chen, Hao-Chung Kuo, Shing Chung Wang, Hsiao-Wen Zan, Chun-Yen Chang

^*Corresponding author for this work

Research output: Contribution to journal › Review article › peer-review

33 Scopus citations

Abstract

This paper reviews the fabrication technology and performance characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) with hybrid distributed Bragg reflectors (DBRs). The GaN-based VCSEL consists of a ten-pair Ta ₂O ₅/SiO ₂ top DBR, a 7λ-thick optical cavity embedded with 10 InGaN/GaN multiquantum wells, and a 29-pair AlN/GaN bottom DBR. Lasing action is observed under continuous-wave operation at room temperature. The laser characteristics, such as temperature-dependent laser threshold current, emission wavelength, and spontaneous emission coupling factors, have been measured and discussed.

Original language	English
Article number	5752264
Pages (from-to)	1594-1602
Number of pages	9
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	17
Issue number	6
DOIs	https://doi.org/10.1109/JSTQE.2011.2116771
State	Published - Nov 2011

Keywords

Distributed Bragg reflectors (DBRs)
GaN
vertical-cavity surface-emitting laser (VCSEL)

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10.1109/JSTQE.2011.2116771

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title = "Characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers",

abstract = "This paper reviews the fabrication technology and performance characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) with hybrid distributed Bragg reflectors (DBRs). The GaN-based VCSEL consists of a ten-pair Ta 2O 5/SiO 2 top DBR, a 7λ-thick optical cavity embedded with 10 InGaN/GaN multiquantum wells, and a 29-pair AlN/GaN bottom DBR. Lasing action is observed under continuous-wave operation at room temperature. The laser characteristics, such as temperature-dependent laser threshold current, emission wavelength, and spontaneous emission coupling factors, have been measured and discussed.",

keywords = "Distributed Bragg reflectors (DBRs), GaN, vertical-cavity surface-emitting laser (VCSEL)",

author = "Tien-Chang Lu and Wu, {Tzeng Tsong} and Chen, {Shih Wei} and Tu, {Po Min} and Li, {Zhen Yu} and Chen, {Chien Kang} and Cheng-Huan Chen and Hao-Chung Kuo and Wang, {Shing Chung} and Hsiao-Wen Zan and Chun-Yen Chang",

year = "2011",

month = nov,

doi = "10.1109/JSTQE.2011.2116771",

language = "English",

volume = "17",

pages = "1594--1602",

journal = "IEEE Journal on Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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T1 - Characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers

AU - Lu, Tien-Chang

AU - Wu, Tzeng Tsong

AU - Chen, Shih Wei

AU - Tu, Po Min

AU - Li, Zhen Yu

AU - Chen, Chien Kang

AU - Chen, Cheng-Huan

AU - Kuo, Hao-Chung

AU - Wang, Shing Chung

AU - Zan, Hsiao-Wen

AU - Chang, Chun-Yen

PY - 2011/11

Y1 - 2011/11

N2 - This paper reviews the fabrication technology and performance characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) with hybrid distributed Bragg reflectors (DBRs). The GaN-based VCSEL consists of a ten-pair Ta 2O 5/SiO 2 top DBR, a 7λ-thick optical cavity embedded with 10 InGaN/GaN multiquantum wells, and a 29-pair AlN/GaN bottom DBR. Lasing action is observed under continuous-wave operation at room temperature. The laser characteristics, such as temperature-dependent laser threshold current, emission wavelength, and spontaneous emission coupling factors, have been measured and discussed.

AB - This paper reviews the fabrication technology and performance characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) with hybrid distributed Bragg reflectors (DBRs). The GaN-based VCSEL consists of a ten-pair Ta 2O 5/SiO 2 top DBR, a 7λ-thick optical cavity embedded with 10 InGaN/GaN multiquantum wells, and a 29-pair AlN/GaN bottom DBR. Lasing action is observed under continuous-wave operation at room temperature. The laser characteristics, such as temperature-dependent laser threshold current, emission wavelength, and spontaneous emission coupling factors, have been measured and discussed.

KW - Distributed Bragg reflectors (DBRs)

KW - GaN

KW - vertical-cavity surface-emitting laser (VCSEL)

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U2 - 10.1109/JSTQE.2011.2116771

DO - 10.1109/JSTQE.2011.2116771

M3 - Review article

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SN - 1077-260X

VL - 17

SP - 1594

EP - 1602

JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

IS - 6

M1 - 5752264

ER -

Characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers

Abstract

Keywords

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