Characteristics of cerium oxide for metal-insulator-metal capacitors

C. H. Cheng; H. H. Hsu; W. B. Chen; Albert Chin; F. S. Yeh

doi:10.1149/1.3258042

Characteristics of cerium oxide for metal-insulator-metal capacitors

C. H. Cheng, H. H. Hsu, W. B. Chen, Albert Chin, F. S. Yeh

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15 Scopus citations

Abstract

In this article, we describe our successful fabrication of a Ce O ₂ metal-insulator-metal (MIM) capacitor with a low voltage nonlinearity. A low leakage current of 3.9× 10^-7 A/ cm ² at -1 V and a small VCC-^α∼421 ppm/ V ² were obtained at a high 10.8 fF/μ m² density for a Pt/Ce O₂ /TaN MIM capacitor. The small VCC-α for a 15 nm thick Ce O₂ dielectric (κ∼20) was much better than the reported dielectrics of Hf O₂, Tb-Hf O₂, and Al₂ O ₃ -Hf O₂ at a similar κ -value (15-20). The good analog performance was due to the combined effect of the Ce O₂ dielectric and the high work-function metals.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	1
DOIs	https://doi.org/10.1149/1.3258042
State	Published - 26 Nov 2009

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title = "Characteristics of cerium oxide for metal-insulator-metal capacitors",

abstract = "In this article, we describe our successful fabrication of a Ce O 2 metal-insulator-metal (MIM) capacitor with a low voltage nonlinearity. A low leakage current of 3.9× 10-7 A/ cm 2 at -1 V and a small VCC-α∼421 ppm/ V 2 were obtained at a high 10.8 fF/μ m2 density for a Pt/Ce O2 /TaN MIM capacitor. The small VCC-α for a 15 nm thick Ce O2 dielectric (κ∼20) was much better than the reported dielectrics of Hf O2, Tb-Hf O2, and Al2 O 3 -Hf O2 at a similar κ -value (15-20). The good analog performance was due to the combined effect of the Ce O2 dielectric and the high work-function metals.",

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T1 - Characteristics of cerium oxide for metal-insulator-metal capacitors

AU - Cheng, C. H.

AU - Hsu, H. H.

AU - Chen, W. B.

AU - Chin, Albert

AU - Yeh, F. S.

PY - 2009/11/26

Y1 - 2009/11/26

N2 - In this article, we describe our successful fabrication of a Ce O 2 metal-insulator-metal (MIM) capacitor with a low voltage nonlinearity. A low leakage current of 3.9× 10-7 A/ cm 2 at -1 V and a small VCC-α∼421 ppm/ V 2 were obtained at a high 10.8 fF/μ m2 density for a Pt/Ce O2 /TaN MIM capacitor. The small VCC-α for a 15 nm thick Ce O2 dielectric (κ∼20) was much better than the reported dielectrics of Hf O2, Tb-Hf O2, and Al2 O 3 -Hf O2 at a similar κ -value (15-20). The good analog performance was due to the combined effect of the Ce O2 dielectric and the high work-function metals.

AB - In this article, we describe our successful fabrication of a Ce O 2 metal-insulator-metal (MIM) capacitor with a low voltage nonlinearity. A low leakage current of 3.9× 10-7 A/ cm 2 at -1 V and a small VCC-α∼421 ppm/ V 2 were obtained at a high 10.8 fF/μ m2 density for a Pt/Ce O2 /TaN MIM capacitor. The small VCC-α for a 15 nm thick Ce O2 dielectric (κ∼20) was much better than the reported dielectrics of Hf O2, Tb-Hf O2, and Al2 O 3 -Hf O2 at a similar κ -value (15-20). The good analog performance was due to the combined effect of the Ce O2 dielectric and the high work-function metals.

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Characteristics of cerium oxide for metal-insulator-metal capacitors

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