Characteristics of atomic layer deposition–grown zinc oxide thin film with and without aluminum

Ming Chun Tseng; Dong Sing Wuu; Chi Lu Chen; Hsin Ying Lee; Cheng Yu Chien; Po Liang Liu; Ray-Hua Horng

doi:10.1016/j.apsusc.2019.06.055

Characteristics of atomic layer deposition–grown zinc oxide thin film with and without aluminum

Ming Chun Tseng, Dong Sing Wuu, Chi Lu Chen, Hsin Ying Lee, Cheng Yu Chien, Po Liang Liu, Ray-Hua Horng^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Zinc oxide (ZnO) and Al-doped ZnO (AZO) thin films were deposited on glass substrates using atomic layer deposition. The Al composition of the AZO thin films was varied by controlling the Zn:Al cycle ratios. The ZnO and AZO thin films were characterized using atomic force microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and optical measurements. The electrical properties of the ZnO and AZO thin films were influenced by the Zn:Al cycle ratios. The resistivity of the AZO thin film decreased significantly, whereas the carrier concentration increased with the Al composition. As the Zn:Al cycle ratio increased, the AZO thin film achieved an average transmittance of >85%.

Original language	English
Pages (from-to)	535-543
Number of pages	9
Journal	Applied Surface Science
Volume	491
DOIs	https://doi.org/10.1016/j.apsusc.2019.06.055
State	Published - 15 Oct 2019

Keywords

Aluminum-doped zinc oxide
Atomic layer deposition
Zinc oxide

Access to Document

10.1016/j.apsusc.2019.06.055

Cite this

@article{2476ce9b45c54d319690abb3d6813739,

title = "Characteristics of atomic layer deposition–grown zinc oxide thin film with and without aluminum",

abstract = "Zinc oxide (ZnO) and Al-doped ZnO (AZO) thin films were deposited on glass substrates using atomic layer deposition. The Al composition of the AZO thin films was varied by controlling the Zn:Al cycle ratios. The ZnO and AZO thin films were characterized using atomic force microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and optical measurements. The electrical properties of the ZnO and AZO thin films were influenced by the Zn:Al cycle ratios. The resistivity of the AZO thin film decreased significantly, whereas the carrier concentration increased with the Al composition. As the Zn:Al cycle ratio increased, the AZO thin film achieved an average transmittance of >85%.",

keywords = "Aluminum-doped zinc oxide, Atomic layer deposition, Zinc oxide",

author = "Tseng, {Ming Chun} and Wuu, {Dong Sing} and Chen, {Chi Lu} and Lee, {Hsin Ying} and Chien, {Cheng Yu} and Liu, {Po Liang} and Ray-Hua Horng",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = oct,

day = "15",

doi = "10.1016/j.apsusc.2019.06.055",

language = "English",

volume = "491",

pages = "535--543",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Characteristics of atomic layer deposition–grown zinc oxide thin film with and without aluminum

AU - Tseng, Ming Chun

AU - Wuu, Dong Sing

AU - Chen, Chi Lu

AU - Lee, Hsin Ying

AU - Chien, Cheng Yu

AU - Liu, Po Liang

AU - Horng, Ray-Hua

PY - 2019/10/15

Y1 - 2019/10/15

N2 - Zinc oxide (ZnO) and Al-doped ZnO (AZO) thin films were deposited on glass substrates using atomic layer deposition. The Al composition of the AZO thin films was varied by controlling the Zn:Al cycle ratios. The ZnO and AZO thin films were characterized using atomic force microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and optical measurements. The electrical properties of the ZnO and AZO thin films were influenced by the Zn:Al cycle ratios. The resistivity of the AZO thin film decreased significantly, whereas the carrier concentration increased with the Al composition. As the Zn:Al cycle ratio increased, the AZO thin film achieved an average transmittance of >85%.

AB - Zinc oxide (ZnO) and Al-doped ZnO (AZO) thin films were deposited on glass substrates using atomic layer deposition. The Al composition of the AZO thin films was varied by controlling the Zn:Al cycle ratios. The ZnO and AZO thin films were characterized using atomic force microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and optical measurements. The electrical properties of the ZnO and AZO thin films were influenced by the Zn:Al cycle ratios. The resistivity of the AZO thin film decreased significantly, whereas the carrier concentration increased with the Al composition. As the Zn:Al cycle ratio increased, the AZO thin film achieved an average transmittance of >85%.

KW - Aluminum-doped zinc oxide

KW - Atomic layer deposition

KW - Zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=85067593646&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2019.06.055

DO - 10.1016/j.apsusc.2019.06.055

M3 - Article

AN - SCOPUS:85067593646

SN - 0169-4332

VL - 491

SP - 535

EP - 543

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Characteristics of atomic layer deposition–grown zinc oxide thin film with and without aluminum

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this