Characteristics of an electrically pumped GaN-based microcavity light emitter with an AlN current blocking layer

Bo Siao Cheng*, Tzeng Tsong Wu, Ying You Lai, Yun Lin Wu, Cheng-Huan Chen, Tien-Chang Lu, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrate a GaN-based microcavity light emitter (MCLE) with an AlN current blocking layer. An AlN layer is inserted on the InGaN/GaN multiple quantum wells as a current blocking layer and an optical confinement layer.

Original languageEnglish
Title of host publication2012 Conference on Lasers and Electro-Optics, CLEO 2012
PublisherOptical Society of America (OSA)
PagesCTh4M.6
ISBN (Print)9781557529435
DOIs
StatePublished - May 2012
Event2012 Conference on Lasers and Electro-Optics, CLEO 2012 - San Jose, CA, United States
Duration: 6 May 201211 May 2012

Publication series

Name2012 Conference on Lasers and Electro-Optics, CLEO 2012

Conference

Conference2012 Conference on Lasers and Electro-Optics, CLEO 2012
Country/TerritoryUnited States
CitySan Jose, CA
Period6/05/1211/05/12

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