Characteristics of a photonic bandgap single defect microcavity electroluminescent device

W. D. Zhou; J. Sabarinathan; P. Bhattarcharya; B. Kochman; E. W. Berg; Peichen Yu; S. W. Pang

doi:10.1109/3.945320

Characteristics of a photonic bandgap single defect microcavity electroluminescent device

W. D. Zhou^*, J. Sabarinathan, P. Bhattarcharya, B. Kochman, E. W. Berg, Peichen Yu, S. W. Pang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

66 Scopus citations

Abstract

A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70- Å compressively strained In_0.15 Ga_0.85 As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 μW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor β ≈ 0.06.

Original language	English
Pages (from-to)	1153-1160
Number of pages	8
Journal	IEEE Journal of Quantum Electronics
Volume	37
Issue number	9
DOIs	https://doi.org/10.1109/3.945320
State	Published - 1 Sep 2001

Keywords

Defect mode
Microcavity
Photonic bandgap
Surface emitting

Access to Document

10.1109/3.945320

Cite this

@article{0ec7b3e769054744ae23b492ff46b56d,

title = "Characteristics of a photonic bandgap single defect microcavity electroluminescent device",

abstract = "A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70- {\AA} compressively strained In0.15 Ga0.85 As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 μW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor β ≈ 0.06.",

keywords = "Defect mode, Microcavity, Photonic bandgap, Surface emitting",

author = "Zhou, {W. D.} and J. Sabarinathan and P. Bhattarcharya and B. Kochman and Berg, {E. W.} and Peichen Yu and Pang, {S. W.}",

year = "2001",

month = sep,

day = "1",

doi = "10.1109/3.945320",

language = "English",

volume = "37",

pages = "1153--1160",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Characteristics of a photonic bandgap single defect microcavity electroluminescent device

AU - Zhou, W. D.

AU - Sabarinathan, J.

AU - Bhattarcharya, P.

AU - Kochman, B.

AU - Berg, E. W.

AU - Yu, Peichen

AU - Pang, S. W.

PY - 2001/9/1

Y1 - 2001/9/1

N2 - A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70- Å compressively strained In0.15 Ga0.85 As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 μW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor β ≈ 0.06.

AB - A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70- Å compressively strained In0.15 Ga0.85 As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 μW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor β ≈ 0.06.

KW - Defect mode

KW - Microcavity

KW - Photonic bandgap

KW - Surface emitting

UR - http://www.scopus.com/inward/record.url?scp=0035444727&partnerID=8YFLogxK

U2 - 10.1109/3.945320

DO - 10.1109/3.945320

M3 - Article

AN - SCOPUS:0035444727

SN - 0018-9197

VL - 37

SP - 1153

EP - 1160

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 9

ER -

Characteristics of a photonic bandgap single defect microcavity electroluminescent device

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this