Characteristics of 1.3 μm InGaNAs light-emitting diodes

Hung Pin D. Yang, Chen Ming Lu, Daniil Livchits, Kuo-Jui Lin, I. Fan Chen, Tsin Dong Lee, Jim Y. Chi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have made InGaNAs light-emitting diodes for fiber-optic applications at 1.3 μm. The epitaxial layers grown on the n-GaAs substrates in a MOCVD system P-type metal grid lines were formed on the light-emitting aperture for current spreading. A maximum optical power of 0.84 mW was measured at 300 mA. The device characteristics were measured and analyzed.

Original languageEnglish
Title of host publicationCLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics
Subtitle of host publicationPhotonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)0780377664
DOIs
StatePublished - 1 Jan 2003
Event5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 - Taipei, Taiwan
Duration: 15 Dec 200319 Dec 2003

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Volume2

Conference

Conference5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003
Country/TerritoryTaiwan
CityTaipei
Period15/12/0319/12/03

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