We have made InGaNAs light-emitting diodes for fiber-optic applications at 1.3 μm. The epitaxial layers grown on the n-GaAs substrates in a MOCVD system P-type metal grid lines were formed on the light-emitting aperture for current spreading. A maximum optical power of 0.84 mW was measured at 300 mA. The device characteristics were measured and analyzed.
|Title of host publication
|CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics
|Subtitle of host publication
|Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings
|Institute of Electrical and Electronics Engineers Inc.
|Number of pages
|Published - 1 Jan 2003
|5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 - Taipei, Taiwan
Duration: 15 Dec 2003 → 19 Dec 2003
|Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
|5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003
|15/12/03 → 19/12/03