Characteristics and stress-induced degradation of laser-activated low temperature polycrystalline silicon thin-film transistors

Du Zen Peng; Ting Chang Chang; Chun Yen Chang; Ming Liang Tsai; Chun Hao Tu; Po-Tsun Liu

doi:10.1063/1.1535732

Characteristics and stress-induced degradation of laser-activated low temperature polycrystalline silicon thin-film transistors

Du Zen Peng^*, Ting Chang Chang, Chun Yen Chang, Ming Liang Tsai, Chun Hao Tu, Po-Tsun Liu

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The characteristics and the reliability of the laser-involved activation for both solid phase crystallization (SPC) and laser crystallization (LC) channel films were examined. The effective trap state density calculated from typical I-V curves was compared for laser-activated and furnace-activated thin film transistors (TFT). The results demonstrated that after laser activation, leakage current becomes larger and more trap state density is generated near drain side especially for LC channel films.

Original language	English
Pages (from-to)	1926-1932
Number of pages	7
Journal	Journal of Applied Physics
Volume	93
Issue number	4
DOIs	https://doi.org/10.1063/1.1535732
State	Published - 15 Feb 2003

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title = "Characteristics and stress-induced degradation of laser-activated low temperature polycrystalline silicon thin-film transistors",

abstract = "The characteristics and the reliability of the laser-involved activation for both solid phase crystallization (SPC) and laser crystallization (LC) channel films were examined. The effective trap state density calculated from typical I-V curves was compared for laser-activated and furnace-activated thin film transistors (TFT). The results demonstrated that after laser activation, leakage current becomes larger and more trap state density is generated near drain side especially for LC channel films.",

author = "Peng, {Du Zen} and Chang, {Ting Chang} and Chang, {Chun Yen} and Tsai, {Ming Liang} and Tu, {Chun Hao} and Po-Tsun Liu",

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AU - Peng, Du Zen

AU - Chang, Ting Chang

AU - Chang, Chun Yen

AU - Tsai, Ming Liang

AU - Tu, Chun Hao

AU - Liu, Po-Tsun

PY - 2003/2/15

Y1 - 2003/2/15

N2 - The characteristics and the reliability of the laser-involved activation for both solid phase crystallization (SPC) and laser crystallization (LC) channel films were examined. The effective trap state density calculated from typical I-V curves was compared for laser-activated and furnace-activated thin film transistors (TFT). The results demonstrated that after laser activation, leakage current becomes larger and more trap state density is generated near drain side especially for LC channel films.

AB - The characteristics and the reliability of the laser-involved activation for both solid phase crystallization (SPC) and laser crystallization (LC) channel films were examined. The effective trap state density calculated from typical I-V curves was compared for laser-activated and furnace-activated thin film transistors (TFT). The results demonstrated that after laser activation, leakage current becomes larger and more trap state density is generated near drain side especially for LC channel films.

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Characteristics and stress-induced degradation of laser-activated low temperature polycrystalline silicon thin-film transistors

Abstract

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