TY - JOUR
T1 - CHARACTERISATIONS AND DESIGN CONSIDERATIONS OF LAMBDA BIPOLAR TRANSISTOR (LBT).
AU - Wu, Chung-Yu
AU - Wu, Ching Yuan
PY - 1981/6
Y1 - 1981/6
N2 - A novel integrated LAMBDA -type voltage-controlled negative-differential-resistance device consisting of a bipolar-junction transistor merged with a metal-oxide-semiconductor field-effect transistor, which has been called the lambda bipolar transistor (LBT), is studied. By considering the effects of the current gain degradation, the dc model of the device is constructed, and the important device parameters such as the peak point, the negative resistance, and the valley point, are characterized. Based on the dc model and the small signal behavior of the LBT, the optimal device design considerations for micropower LBT ICs are presented. The temperature stability of the LBT is also investigated.
AB - A novel integrated LAMBDA -type voltage-controlled negative-differential-resistance device consisting of a bipolar-junction transistor merged with a metal-oxide-semiconductor field-effect transistor, which has been called the lambda bipolar transistor (LBT), is studied. By considering the effects of the current gain degradation, the dc model of the device is constructed, and the important device parameters such as the peak point, the negative resistance, and the valley point, are characterized. Based on the dc model and the small signal behavior of the LBT, the optimal device design considerations for micropower LBT ICs are presented. The temperature stability of the LBT is also investigated.
UR - http://www.scopus.com/inward/record.url?scp=0019581326&partnerID=8YFLogxK
U2 - 10.1049/ip-i-1.1981.0024
DO - 10.1049/ip-i-1.1981.0024
M3 - Article
AN - SCOPUS:0019581326
VL - 128
SP - 73
EP - 80
JO - IET Circuits, Devices and Systems
JF - IET Circuits, Devices and Systems
SN - 1751-858X
IS - 3
ER -