Channel thickness effect on high-frequency performance of poly-Si thin-film transistors

Kun Ming Chen; Tzu I. Tsai; Ting Yao Lin; Horng-Chih Lin; Tien-Sheng Chao; Guo Wei Huang; Tiao Yuan Huang

doi:10.1109/LED.2013.2267809

Channel thickness effect on high-frequency performance of poly-Si thin-film transistors

Kun Ming Chen, Tzu I. Tsai, Ting Yao Lin, Horng-Chih Lin, Tien-Sheng Chao, Guo Wei Huang, Tiao Yuan Huang

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

In this letter, we present the high-frequency performances of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a nominal gate length of 0.22 μ m. Owing to the short gate length and adoption of salicide process, cutoff frequency (f_T) of 17 GHz and maximum oscillation frequency of ∼ 21 GHz are obtained. The result suggests that the poly-Si TFT technology is applicable to RF integrated circuits up to 2 GHz. In addition, we also investigate the effects of channel thickness on the high-frequency characteristics of poly-Si TFTs. We find that the variation of f_T with channel thickness is mainly due to the change in transconductance.

Original language	English
Article number	6553156
Pages (from-to)	1020-1022
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	34
Issue number	8
DOIs	https://doi.org/10.1109/LED.2013.2267809
State	Published - 2013

Keywords

Channel thickness
gate length
radio frequency
thin-film transistors (TFTs)
transconductance

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10.1109/LED.2013.2267809

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title = "Channel thickness effect on high-frequency performance of poly-Si thin-film transistors",

abstract = "In this letter, we present the high-frequency performances of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a nominal gate length of 0.22 μ m. Owing to the short gate length and adoption of salicide process, cutoff frequency (fT) of 17 GHz and maximum oscillation frequency of ∼ 21 GHz are obtained. The result suggests that the poly-Si TFT technology is applicable to RF integrated circuits up to 2 GHz. In addition, we also investigate the effects of channel thickness on the high-frequency characteristics of poly-Si TFTs. We find that the variation of fT with channel thickness is mainly due to the change in transconductance.",

keywords = "Channel thickness, gate length, radio frequency, thin-film transistors (TFTs), transconductance",

author = "Chen, {Kun Ming} and Tsai, {Tzu I.} and Lin, {Ting Yao} and Horng-Chih Lin and Tien-Sheng Chao and Huang, {Guo Wei} and Huang, {Tiao Yuan}",

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language = "English",

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T1 - Channel thickness effect on high-frequency performance of poly-Si thin-film transistors

AU - Chen, Kun Ming

AU - Tsai, Tzu I.

AU - Lin, Ting Yao

AU - Lin, Horng-Chih

AU - Chao, Tien-Sheng

AU - Huang, Guo Wei

AU - Huang, Tiao Yuan

PY - 2013

Y1 - 2013

N2 - In this letter, we present the high-frequency performances of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a nominal gate length of 0.22 μ m. Owing to the short gate length and adoption of salicide process, cutoff frequency (fT) of 17 GHz and maximum oscillation frequency of ∼ 21 GHz are obtained. The result suggests that the poly-Si TFT technology is applicable to RF integrated circuits up to 2 GHz. In addition, we also investigate the effects of channel thickness on the high-frequency characteristics of poly-Si TFTs. We find that the variation of fT with channel thickness is mainly due to the change in transconductance.

AB - In this letter, we present the high-frequency performances of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a nominal gate length of 0.22 μ m. Owing to the short gate length and adoption of salicide process, cutoff frequency (fT) of 17 GHz and maximum oscillation frequency of ∼ 21 GHz are obtained. The result suggests that the poly-Si TFT technology is applicable to RF integrated circuits up to 2 GHz. In addition, we also investigate the effects of channel thickness on the high-frequency characteristics of poly-Si TFTs. We find that the variation of fT with channel thickness is mainly due to the change in transconductance.

KW - Channel thickness

KW - gate length

KW - radio frequency

KW - thin-film transistors (TFTs)

KW - transconductance

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M3 - Article

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JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

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Channel thickness effect on high-frequency performance of poly-Si thin-film transistors

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