In this letter, we present the high-frequency performances of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a nominal gate length of 0.22 μ m. Owing to the short gate length and adoption of salicide process, cutoff frequency (fT) of 17 GHz and maximum oscillation frequency of ∼ 21 GHz are obtained. The result suggests that the poly-Si TFT technology is applicable to RF integrated circuits up to 2 GHz. In addition, we also investigate the effects of channel thickness on the high-frequency characteristics of poly-Si TFTs. We find that the variation of fT with channel thickness is mainly due to the change in transconductance.
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - 12 Jul 2013|
- Channel thickness
- gate length
- radio frequency
- thin-film transistors (TFTs)