Channel thickness effect on high-frequency performance of poly-Si thin-film transistors

Kun Ming Chen, Tzu I. Tsai, Ting Yao Lin, Horng-Chih Lin, Tien-Sheng Chao, Guo Wei Huang, Tiao Yuan Huang

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


In this letter, we present the high-frequency performances of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a nominal gate length of 0.22 μ m. Owing to the short gate length and adoption of salicide process, cutoff frequency (fT) of 17 GHz and maximum oscillation frequency of ∼ 21 GHz are obtained. The result suggests that the poly-Si TFT technology is applicable to RF integrated circuits up to 2 GHz. In addition, we also investigate the effects of channel thickness on the high-frequency characteristics of poly-Si TFTs. We find that the variation of fT with channel thickness is mainly due to the change in transconductance.

Original languageEnglish
Article number6553156
Pages (from-to)1020-1022
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
StatePublished - 12 Jul 2013


  • Channel thickness
  • gate length
  • radio frequency
  • thin-film transistors (TFTs)
  • transconductance


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