Channel film thickness effect of low-temperature polycrystalline-silicon thin-film transistors

William Cheng Yu Ma, Tsung Yu Chiang, Chi Ruei Yeh, Tien-Sheng Chao, Tan Fu Lei

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


In this paper, the channel-film-thickness effect of low-temperature polycrystalline-Si thin-film transistors (LTPS-TFTs) is investigated. Greater channel film thickness can provide a higher field-effect mobility μ FE , rising from 14.33 to 22.33 cm 2 /V · s, as the channel film thickness increases from 55 to 120 nm, due to grain-size effect. In addition, varying the channel film thickness of LTPS-TFTs results in different junction leakage current due to the source/drain (S/D) junction area effect. Moreover, the S/D series resistance also significantly increases when the channel film thickness is reduced from 120 to 35 nm, leading to poor field-effect mobility μ FE and driving current. Consequently, the optimum channel film thickness for active-matrix liquid-crystal displays may be identified.

Original languageEnglish
Article number5723733
Pages (from-to)1268-1272
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number4
StatePublished - 1 Apr 2011


  • Channel film thickness
  • low-temperature polycrystalline-Si thin-film transistors (LTPS-TFTs)
  • scaling down


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