Cesium Azide-An Efficient Material for Green Light-Emitting Diodes with Giant Quantum Dots

Hoang Tuan Vu; Chun Yuan Huang; Chih Jung Chen; Ray Kuang Chiang; Hsin-Chieh Yu; Ying Chih Chen; Yan Kuin Su

doi:10.1109/LPT.2015.2454052

Cesium Azide-An Efficient Material for Green Light-Emitting Diodes with Giant Quantum Dots

Hoang Tuan Vu, Chun Yuan Huang, Chih Jung Chen, Ray Kuang Chiang, Hsin-Chieh Yu, Ying Chih Chen, Yan Kuin Su^*

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A novel efficient and air-stable electron injection layer (EIL) of cesium azide (CsN₃) was compared with conventional ones including CsF, Cs₂CO₃, LiF and without EIL in type-II quantum dot light-emitting diodes (QLEDs) with both organic electron and hole transport layers. Via directly decomposing to pristine cesium (Cs), the lowerature evaporated CsN₃ provided a better interfacial energy level alignment without damaging the underneath organic layer. Consequently, the current efficiencies of 7.45 cd/A was achieved in the CsN₃-based green QLEDs consisting of giant CdSe@ZnS/ZnS quantum dots at 544 nm, which was 310% (at 10 mA/cm²) improvement over the LiF-based QLEDs. Moreover, the light turn-on voltage in CsN₃-devices significantly decreased ∼ 5.5 V in comparison with LiF-devices.

Original language	English
Article number	7154418
Pages (from-to)	2123-2126
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	27
Issue number	20
DOIs	https://doi.org/10.1109/LPT.2015.2454052
State	Published - 15 Oct 2015

Keywords

Quantum dots (QDs)
alkali metal compound
cesium azide (CsN)
electron injection
quantum dot light-emitting diodes (QLED)

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title = "Cesium Azide-An Efficient Material for Green Light-Emitting Diodes with Giant Quantum Dots",

abstract = "A novel efficient and air-stable electron injection layer (EIL) of cesium azide (CsN3) was compared with conventional ones including CsF, Cs2CO3, LiF and without EIL in type-II quantum dot light-emitting diodes (QLEDs) with both organic electron and hole transport layers. Via directly decomposing to pristine cesium (Cs), the lowerature evaporated CsN3 provided a better interfacial energy level alignment without damaging the underneath organic layer. Consequently, the current efficiencies of 7.45 cd/A was achieved in the CsN3-based green QLEDs consisting of giant CdSe@ZnS/ZnS quantum dots at 544 nm, which was 310% (at 10 mA/cm2) improvement over the LiF-based QLEDs. Moreover, the light turn-on voltage in CsN3-devices significantly decreased ∼ 5.5 V in comparison with LiF-devices.",

keywords = "Quantum dots (QDs), alkali metal compound, cesium azide (CsN), electron injection, quantum dot light-emitting diodes (QLED)",

author = "Vu, {Hoang Tuan} and Huang, {Chun Yuan} and Chen, {Chih Jung} and Chiang, {Ray Kuang} and Hsin-Chieh Yu and Chen, {Ying Chih} and Su, {Yan Kuin}",

year = "2015",

month = oct,

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doi = "10.1109/LPT.2015.2454052",

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AU - Vu, Hoang Tuan

AU - Huang, Chun Yuan

AU - Chen, Chih Jung

AU - Chiang, Ray Kuang

AU - Yu, Hsin-Chieh

AU - Chen, Ying Chih

AU - Su, Yan Kuin

PY - 2015/10/15

Y1 - 2015/10/15

N2 - A novel efficient and air-stable electron injection layer (EIL) of cesium azide (CsN3) was compared with conventional ones including CsF, Cs2CO3, LiF and without EIL in type-II quantum dot light-emitting diodes (QLEDs) with both organic electron and hole transport layers. Via directly decomposing to pristine cesium (Cs), the lowerature evaporated CsN3 provided a better interfacial energy level alignment without damaging the underneath organic layer. Consequently, the current efficiencies of 7.45 cd/A was achieved in the CsN3-based green QLEDs consisting of giant CdSe@ZnS/ZnS quantum dots at 544 nm, which was 310% (at 10 mA/cm2) improvement over the LiF-based QLEDs. Moreover, the light turn-on voltage in CsN3-devices significantly decreased ∼ 5.5 V in comparison with LiF-devices.

AB - A novel efficient and air-stable electron injection layer (EIL) of cesium azide (CsN3) was compared with conventional ones including CsF, Cs2CO3, LiF and without EIL in type-II quantum dot light-emitting diodes (QLEDs) with both organic electron and hole transport layers. Via directly decomposing to pristine cesium (Cs), the lowerature evaporated CsN3 provided a better interfacial energy level alignment without damaging the underneath organic layer. Consequently, the current efficiencies of 7.45 cd/A was achieved in the CsN3-based green QLEDs consisting of giant CdSe@ZnS/ZnS quantum dots at 544 nm, which was 310% (at 10 mA/cm2) improvement over the LiF-based QLEDs. Moreover, the light turn-on voltage in CsN3-devices significantly decreased ∼ 5.5 V in comparison with LiF-devices.

KW - Quantum dots (QDs)

KW - alkali metal compound

KW - cesium azide (CsN)

KW - electron injection

KW - quantum dot light-emitting diodes (QLED)

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JF - IEEE Photonics Technology Letters

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ER -

Cesium Azide-An Efficient Material for Green Light-Emitting Diodes with Giant Quantum Dots

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Keywords

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