Cerium oxide nanocrystals for nonvolatile memory applications

Shao Ming Yang; Chao-Hsin Chien; Jiun Jia Huang; Tan Fu Lei; Ming Jinn Tsai; Lurng Shehng Lee

doi:10.1063/1.2821367

Cerium oxide nanocrystals for nonvolatile memory applications

Shao Ming Yang^*, Chao-Hsin Chien, Jiun Jia Huang, Tan Fu Lei, Ming Jinn Tsai, Lurng Shehng Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

The characteristics of silicon-oxide-nitride-oxide-silicon-type memories embedded with cerium oxide nanocrystals were demonstrated. They were fabricated by depositing a thin Ce O2 film on the Si O2 tunneling layer and subsequently rapid-thermal annealing process. The mean size and aerial density of the Ce O2 nanocrystals embedded in Si O2 are estimated to be about 8-10 nm and (3-7) × 1011 cm-2 after a high-temperature annealing with different ambients on 900 °C. The program/erase behaviors and data retention characteristics were described to demonstrate its advantages for nonvolatile memory device applications.

Original language	English
Article number	262104
Journal	Applied Physics Letters
Volume	91
Issue number	26
DOIs	https://doi.org/10.1063/1.2821367
State	Published - 1 Dec 2007

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title = "Cerium oxide nanocrystals for nonvolatile memory applications",

abstract = "The characteristics of silicon-oxide-nitride-oxide-silicon-type memories embedded with cerium oxide nanocrystals were demonstrated. They were fabricated by depositing a thin Ce O2 film on the Si O2 tunneling layer and subsequently rapid-thermal annealing process. The mean size and aerial density of the Ce O2 nanocrystals embedded in Si O2 are estimated to be about 8-10 nm and (3-7) × 1011 cm-2 after a high-temperature annealing with different ambients on 900 °C. The program/erase behaviors and data retention characteristics were described to demonstrate its advantages for nonvolatile memory device applications.",

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AU - Yang, Shao Ming

AU - Chien, Chao-Hsin

AU - Huang, Jiun Jia

AU - Lei, Tan Fu

AU - Tsai, Ming Jinn

AU - Lee, Lurng Shehng

PY - 2007/12/1

Y1 - 2007/12/1

N2 - The characteristics of silicon-oxide-nitride-oxide-silicon-type memories embedded with cerium oxide nanocrystals were demonstrated. They were fabricated by depositing a thin Ce O2 film on the Si O2 tunneling layer and subsequently rapid-thermal annealing process. The mean size and aerial density of the Ce O2 nanocrystals embedded in Si O2 are estimated to be about 8-10 nm and (3-7) × 1011 cm-2 after a high-temperature annealing with different ambients on 900 °C. The program/erase behaviors and data retention characteristics were described to demonstrate its advantages for nonvolatile memory device applications.

AB - The characteristics of silicon-oxide-nitride-oxide-silicon-type memories embedded with cerium oxide nanocrystals were demonstrated. They were fabricated by depositing a thin Ce O2 film on the Si O2 tunneling layer and subsequently rapid-thermal annealing process. The mean size and aerial density of the Ce O2 nanocrystals embedded in Si O2 are estimated to be about 8-10 nm and (3-7) × 1011 cm-2 after a high-temperature annealing with different ambients on 900 °C. The program/erase behaviors and data retention characteristics were described to demonstrate its advantages for nonvolatile memory device applications.

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SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

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Cerium oxide nanocrystals for nonvolatile memory applications

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