Abstract
Monolayer 2D transition metal dichalcogenides (TMDCs) have shown great promise for optoelectronic applications due to their direct bandgaps and unique physical properties. In particular, they can possess photoluminescence quantum yields (PL QY) approaching unity at the ultimate thickness limit, making their application in light-emitting devices highly promising. Here, large-area WS2 grown via chemical vapor deposition is synthesized and characterized for visible (red) light-emitting devices. Detail optical characterization of the synthesized films is performed, which show peak PL QY as high as 12%. Electrically pumped emission from the synthetic WS2 is achieved utilizing a transient-mode electroluminescence device structure, which consists of a single metal–semiconductor contact and alternating gate fields to achieve bipolar emission. Utilizing this aforementioned structure, a centimeter-scale (≈0.5 cm2) visible (640 nm) display is demonstrated, fabricated using TMDCs to showcase the potential of this material system for display applications.
Original language | English |
---|---|
Article number | 1907941 |
Pages (from-to) | 1-6 |
Number of pages | 6 |
Journal | Advanced Functional Materials |
Volume | 30 |
Issue number | 6 |
DOIs | |
State | Published - 5 Feb 2020 |
Keywords
- chemical vapor deposition
- electroluminescence
- monolayer display
- transition metal dichalcogenide
- visible emission
- WS2
- DIODES
- PHOTOLUMINESCENCE