Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si

Ling Lee; Wen Chung Fan; Jui Tai Ku; Wen-Hao Chang; Wei-Kuo Chen; Wu-Ching Chou; Chih Hsin Ko; Cheng Hsien Wu; You Ru Lin; Clement H. Wann; Chao Wei Hsu; Yung Feng Chen; Yan Kuin Su

doi:10.1088/0957-4484/21/46/465701

Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si

Ling Lee^*, Wen Chung Fan, Jui Tai Ku, Wen-Hao Chang, Wei-Kuo Chen, Wu-Ching Chou, Chih Hsin Ko, Cheng Hsien Wu, You Ru Lin, Clement H. Wann, Chao Wei Hsu, Yung Feng Chen, Yan Kuin Su

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The optical properties of GaAs nano-wires grown on shallow-trench-patterned Si(001) substrates were investigated by cathodoluminescence. The results showed that when the trench width ranges from 80 to 100 nm, the emission efficiency of GaAs can be enhanced and is stronger than that of a homogeneously grown epilayer. The suppression of non-radiative centers is attributed to the trapping of both threading dislocations and planar defects at the trench sidewalls. This approach demonstrates the feasibility of growing nano-scaled GaAs-based optoelectronic devices on Si substrates.

Original language	English
Article number	465701
Pages (from-to)	1-5
Number of pages	5
Journal	Nanotechnology
Volume	21
Issue number	46
DOIs	https://doi.org/10.1088/0957-4484/21/46/465701
State	Published - 19 Nov 2010

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title = "Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si",

abstract = "The optical properties of GaAs nano-wires grown on shallow-trench-patterned Si(001) substrates were investigated by cathodoluminescence. The results showed that when the trench width ranges from 80 to 100 nm, the emission efficiency of GaAs can be enhanced and is stronger than that of a homogeneously grown epilayer. The suppression of non-radiative centers is attributed to the trapping of both threading dislocations and planar defects at the trench sidewalls. This approach demonstrates the feasibility of growing nano-scaled GaAs-based optoelectronic devices on Si substrates.",

author = "Ling Lee and Fan, {Wen Chung} and Ku, {Jui Tai} and Wen-Hao Chang and Wei-Kuo Chen and Wu-Ching Chou and Ko, {Chih Hsin} and Wu, {Cheng Hsien} and Lin, {You Ru} and Wann, {Clement H.} and Hsu, {Chao Wei} and Chen, {Yung Feng} and Su, {Yan Kuin}",

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T1 - Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si

AU - Lee, Ling

AU - Fan, Wen Chung

AU - Ku, Jui Tai

AU - Chang, Wen-Hao

AU - Chen, Wei-Kuo

AU - Chou, Wu-Ching

AU - Ko, Chih Hsin

AU - Wu, Cheng Hsien

AU - Lin, You Ru

AU - Wann, Clement H.

AU - Hsu, Chao Wei

AU - Chen, Yung Feng

AU - Su, Yan Kuin

PY - 2010/11/19

Y1 - 2010/11/19

N2 - The optical properties of GaAs nano-wires grown on shallow-trench-patterned Si(001) substrates were investigated by cathodoluminescence. The results showed that when the trench width ranges from 80 to 100 nm, the emission efficiency of GaAs can be enhanced and is stronger than that of a homogeneously grown epilayer. The suppression of non-radiative centers is attributed to the trapping of both threading dislocations and planar defects at the trench sidewalls. This approach demonstrates the feasibility of growing nano-scaled GaAs-based optoelectronic devices on Si substrates.

AB - The optical properties of GaAs nano-wires grown on shallow-trench-patterned Si(001) substrates were investigated by cathodoluminescence. The results showed that when the trench width ranges from 80 to 100 nm, the emission efficiency of GaAs can be enhanced and is stronger than that of a homogeneously grown epilayer. The suppression of non-radiative centers is attributed to the trapping of both threading dislocations and planar defects at the trench sidewalls. This approach demonstrates the feasibility of growing nano-scaled GaAs-based optoelectronic devices on Si substrates.

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U2 - 10.1088/0957-4484/21/46/465701

DO - 10.1088/0957-4484/21/46/465701

M3 - Article

C2 - 20972318

AN - SCOPUS:78650139553

SN - 0957-4484

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EP - 5

JO - Nanotechnology

JF - Nanotechnology

IS - 46

M1 - 465701

ER -

Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si

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