Cascode GaN HEMT Gate Driving Analysis

Vanessa Heumesser*, Jih Sheng Lai, Hsin Che Hsieh, Johnny Hsu, Chih Yi Yang, Edward Yi Chang, Ching Yao Liu, Wei Hua Chieng, Yueh Tsung Hsieh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The aim of this paper is to analyze the conventional cascode gate driving to understand the switching transition and to provide a design guide for the GaN HEMT and its associated packaging. A double-pulse tester has been designed and fabricated with minimum parasitic inductance to avoid unnecessary parasitic ringing. The switching behaviors in both turn-on and -off are analyzed through topological study and explained through SPICE simulation. Two different cascode devices were tested to show the impact of threshold voltage and low-voltage Si MOSFET selection.

Original languageEnglish
Title of host publicationWiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350337112
DOIs
StatePublished - 2023
Event2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 - Hsinchu, Taiwan
Duration: 27 Aug 202329 Aug 2023

Publication series

NameWiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023
Country/TerritoryTaiwan
CityHsinchu
Period27/08/2329/08/23

Keywords

  • Cascode GaN
  • Gate driving
  • HEMT

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