Carrier transportation mechanism of the TaN/HfO2/IL/Si structure with silicon surface fluorine implantation

Woei Cherng Wu; Chao Sung Lai; Tzu Ming Wang; Jer Chyi Wang; Chih Wei Hsu; Ming Wen Ma; Wen Cheng Lo; Tien-Sheng Chao

doi:10.1109/TED.2008.925150

Carrier transportation mechanism of the TaN/HfO₂/IL/Si structure with silicon surface fluorine implantation

Woei Cherng Wu, Chao Sung Lai^*, Tzu Ming Wang, Jer Chyi Wang, Chih Wei Hsu, Ming Wen Ma, Wen Cheng Lo, Tien-Sheng Chao

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

In this paper, the current transportation mechanism of HfO₂ gate dielectrics with a TaN metal gate and silicon surface fluorine implantation is investigated. Based on the experimental results of the temperature dependence of gate leakage current and Fowler-Nordheim tunneling characteristics at 77 K, we have extracted the current transport mechanisms and energy band diagrams for TaN/HfO₂/IL/ Si structures with fluorine incorporation, respectively. In particular, we have obtained the following physical quantities: 1) fluorinated and as-deposited interfacial layer (IL)/Si barrier heights (or conduction band offsets) at 3.2 and 2.7 eV; 2) TaN/fluorinated and as-deposited HfO₂ barrier heights at 2.6 and 1.9 eV; and 3) effective trapping levels at 1.25 eV (under both gate and substrate injections) below the HfOF conduction band and at 1.04 eV (under gate injection) and 1.11 eV (under substrate injection) below the HfO₂ conduction band, which contributes to Frenkel-Poole conduction.

Original language	English
Pages (from-to)	1639-1646
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	7
DOIs	https://doi.org/10.1109/TED.2008.925150
State	Published - Jul 2008

Keywords

Current transport
Fluorinated HfO
Fluorine implantation

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@article{e32cb7238e0245a3930bf600f49e7ac0,

title = "Carrier transportation mechanism of the TaN/HfO2/IL/Si structure with silicon surface fluorine implantation",

abstract = "In this paper, the current transportation mechanism of HfO2 gate dielectrics with a TaN metal gate and silicon surface fluorine implantation is investigated. Based on the experimental results of the temperature dependence of gate leakage current and Fowler-Nordheim tunneling characteristics at 77 K, we have extracted the current transport mechanisms and energy band diagrams for TaN/HfO2/IL/ Si structures with fluorine incorporation, respectively. In particular, we have obtained the following physical quantities: 1) fluorinated and as-deposited interfacial layer (IL)/Si barrier heights (or conduction band offsets) at 3.2 and 2.7 eV; 2) TaN/fluorinated and as-deposited HfO2 barrier heights at 2.6 and 1.9 eV; and 3) effective trapping levels at 1.25 eV (under both gate and substrate injections) below the HfOF conduction band and at 1.04 eV (under gate injection) and 1.11 eV (under substrate injection) below the HfO2 conduction band, which contributes to Frenkel-Poole conduction.",

keywords = "Current transport, Fluorinated HfO, Fluorine implantation",

author = "Wu, {Woei Cherng} and Lai, {Chao Sung} and Wang, {Tzu Ming} and Wang, {Jer Chyi} and Hsu, {Chih Wei} and Ma, {Ming Wen} and Lo, {Wen Cheng} and Tien-Sheng Chao",

year = "2008",

month = jul,

doi = "10.1109/TED.2008.925150",

language = "English",

volume = "55",

pages = "1639--1646",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",

number = "7",

}

TY - JOUR

T1 - Carrier transportation mechanism of the TaN/HfO2/IL/Si structure with silicon surface fluorine implantation

AU - Wu, Woei Cherng

AU - Lai, Chao Sung

AU - Wang, Tzu Ming

AU - Wang, Jer Chyi

AU - Hsu, Chih Wei

AU - Ma, Ming Wen

AU - Lo, Wen Cheng

AU - Chao, Tien-Sheng

PY - 2008/7

Y1 - 2008/7

N2 - In this paper, the current transportation mechanism of HfO2 gate dielectrics with a TaN metal gate and silicon surface fluorine implantation is investigated. Based on the experimental results of the temperature dependence of gate leakage current and Fowler-Nordheim tunneling characteristics at 77 K, we have extracted the current transport mechanisms and energy band diagrams for TaN/HfO2/IL/ Si structures with fluorine incorporation, respectively. In particular, we have obtained the following physical quantities: 1) fluorinated and as-deposited interfacial layer (IL)/Si barrier heights (or conduction band offsets) at 3.2 and 2.7 eV; 2) TaN/fluorinated and as-deposited HfO2 barrier heights at 2.6 and 1.9 eV; and 3) effective trapping levels at 1.25 eV (under both gate and substrate injections) below the HfOF conduction band and at 1.04 eV (under gate injection) and 1.11 eV (under substrate injection) below the HfO2 conduction band, which contributes to Frenkel-Poole conduction.

AB - In this paper, the current transportation mechanism of HfO2 gate dielectrics with a TaN metal gate and silicon surface fluorine implantation is investigated. Based on the experimental results of the temperature dependence of gate leakage current and Fowler-Nordheim tunneling characteristics at 77 K, we have extracted the current transport mechanisms and energy band diagrams for TaN/HfO2/IL/ Si structures with fluorine incorporation, respectively. In particular, we have obtained the following physical quantities: 1) fluorinated and as-deposited interfacial layer (IL)/Si barrier heights (or conduction band offsets) at 3.2 and 2.7 eV; 2) TaN/fluorinated and as-deposited HfO2 barrier heights at 2.6 and 1.9 eV; and 3) effective trapping levels at 1.25 eV (under both gate and substrate injections) below the HfOF conduction band and at 1.04 eV (under gate injection) and 1.11 eV (under substrate injection) below the HfO2 conduction band, which contributes to Frenkel-Poole conduction.

KW - Current transport

KW - Fluorinated HfO

KW - Fluorine implantation

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DO - 10.1109/TED.2008.925150

M3 - Article

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SN - 0018-9383

VL - 55

SP - 1639

EP - 1646

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

ER -

Carrier transportation mechanism of the TaN/HfO₂/IL/Si structure with silicon surface fluorine implantation

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