Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence

Shih Wei Feng; C. C. Pan; Jen Inn Chyi; Chien-Nan Kuo; Kuei Hsien Chen

doi:10.1002/pssc.200674825

Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence

Shih Wei Feng^*, C. C. Pan, Jen Inn Chyi, Chien-Nan Kuo, Kuei Hsien Chen

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Carrier transport of dichromatic InGaN-based LEDs with AlGaN spacer bandgap dependence has been studied. TREL measurements show that carrier dynamics could be well explained by the combined effects of carrier effective mass, carrier mobility, quantum confinement, and device structures. The experimental results provide important information for device designs.

Original language	English
Pages (from-to)	2716-2719
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	4
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200674825
State	Published - 1 Dec 2007
Event	International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan Duration: 22 Oct 2006 → 27 Oct 2006

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title = "Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence",

abstract = "Carrier transport of dichromatic InGaN-based LEDs with AlGaN spacer bandgap dependence has been studied. TREL measurements show that carrier dynamics could be well explained by the combined effects of carrier effective mass, carrier mobility, quantum confinement, and device structures. The experimental results provide important information for device designs.",

author = "Feng, {Shih Wei} and Pan, {C. C.} and Chyi, {Jen Inn} and Chien-Nan Kuo and Chen, {Kuei Hsien}",

year = "2007",

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doi = "10.1002/pssc.200674825",

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T1 - Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence

AU - Feng, Shih Wei

AU - Pan, C. C.

AU - Chyi, Jen Inn

AU - Kuo, Chien-Nan

AU - Chen, Kuei Hsien

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Carrier transport of dichromatic InGaN-based LEDs with AlGaN spacer bandgap dependence has been studied. TREL measurements show that carrier dynamics could be well explained by the combined effects of carrier effective mass, carrier mobility, quantum confinement, and device structures. The experimental results provide important information for device designs.

AB - Carrier transport of dichromatic InGaN-based LEDs with AlGaN spacer bandgap dependence has been studied. TREL measurements show that carrier dynamics could be well explained by the combined effects of carrier effective mass, carrier mobility, quantum confinement, and device structures. The experimental results provide important information for device designs.

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U2 - 10.1002/pssc.200674825

DO - 10.1002/pssc.200674825

M3 - Conference article

AN - SCOPUS:49749131935

SN - 1862-6351

VL - 4

SP - 2716

EP - 2719

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 7

T2 - International Workshop on Nitride Semiconductors, IWN 2006

Y2 - 22 October 2006 through 27 October 2006

ER -

Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence

Abstract

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