Carrier recombination through donors/acceptors in heavily doped silicon

Chen-Ming Hu*, William G. Oldham

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


Carrier recombination in heavily doped semiconductors via shallow donor or acceptor states is analyzed. The results are in general agreement with experimental lifetime observations including the 1/n20 or 1/P20 dependence, and the insensitivity to temperature and to the dopant used. Capture cross sections of about 10-20 cm 2 needed to fit the lifetime data are reasonable for neutral traps and are consistent with low-temperature capture cross sections reported for shallow dopants.

Original languageEnglish
Pages (from-to)636-639
Number of pages4
JournalApplied Physics Letters
Issue number8
StatePublished - 1 Dec 1979


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