Carrier recombination in heavily doped semiconductors via shallow donor or acceptor states is analyzed. The results are in general agreement with experimental lifetime observations including the 1/n20 or 1/P20 dependence, and the insensitivity to temperature and to the dopant used. Capture cross sections of about 10-20 cm 2 needed to fit the lifetime data are reasonable for neutral traps and are consistent with low-temperature capture cross sections reported for shallow dopants.
|Number of pages||4|
|Journal||Applied Physics Letters|
|State||Published - 1 Dec 1979|