Carrier recombination through donors/acceptors in heavily doped silicon

Chen-Ming Hu; William G. Oldham

doi:10.1063/1.91234

Carrier recombination through donors/acceptors in heavily doped silicon

Chen-Ming Hu^*, William G. Oldham

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Carrier recombination in heavily doped semiconductors via shallow donor or acceptor states is analyzed. The results are in general agreement with experimental lifetime observations including the 1/n²₀ or 1/P²₀ dependence, and the insensitivity to temperature and to the dopant used. Capture cross sections of about 10^-20 cm ² needed to fit the lifetime data are reasonable for neutral traps and are consistent with low-temperature capture cross sections reported for shallow dopants.

Original language	English
Pages (from-to)	636-639
Number of pages	4
Journal	Applied Physics Letters
Volume	35
Issue number	8
DOIs	https://doi.org/10.1063/1.91234
State	Published - 1 Dec 1979

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title = "Carrier recombination through donors/acceptors in heavily doped silicon",

abstract = "Carrier recombination in heavily doped semiconductors via shallow donor or acceptor states is analyzed. The results are in general agreement with experimental lifetime observations including the 1/n20 or 1/P20 dependence, and the insensitivity to temperature and to the dopant used. Capture cross sections of about 10-20 cm 2 needed to fit the lifetime data are reasonable for neutral traps and are consistent with low-temperature capture cross sections reported for shallow dopants.",

author = "Chen-Ming Hu and Oldham, {William G.}",

year = "1979",

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doi = "10.1063/1.91234",

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T1 - Carrier recombination through donors/acceptors in heavily doped silicon

AU - Hu, Chen-Ming

AU - Oldham, William G.

PY - 1979/12/1

Y1 - 1979/12/1

N2 - Carrier recombination in heavily doped semiconductors via shallow donor or acceptor states is analyzed. The results are in general agreement with experimental lifetime observations including the 1/n20 or 1/P20 dependence, and the insensitivity to temperature and to the dopant used. Capture cross sections of about 10-20 cm 2 needed to fit the lifetime data are reasonable for neutral traps and are consistent with low-temperature capture cross sections reported for shallow dopants.

AB - Carrier recombination in heavily doped semiconductors via shallow donor or acceptor states is analyzed. The results are in general agreement with experimental lifetime observations including the 1/n20 or 1/P20 dependence, and the insensitivity to temperature and to the dopant used. Capture cross sections of about 10-20 cm 2 needed to fit the lifetime data are reasonable for neutral traps and are consistent with low-temperature capture cross sections reported for shallow dopants.

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U2 - 10.1063/1.91234

DO - 10.1063/1.91234

M3 - Article

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SN - 0003-6951

VL - 35

SP - 636

EP - 639

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Carrier recombination through donors/acceptors in heavily doped silicon

Abstract

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