Carrier dynamics in isoelectronic ZnSe1-xOx semiconductors

Y. C. Lin, H. L. Chung, Wu-Ching Chou, Wei-Kuo Chen, Wen-Hao Chang, C. Y. Chen, J. I. Chyi

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22 Scopus citations


This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe1-xOx (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. These findings are consistent with the initial fall in the stretching exponent β followed by its monotonic increase with increasing temperature.

Original languageEnglish
Article number041909
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number4
StatePublished - 26 Jul 2010


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