Carrier dynamics in isoelectronic ZnSe1-xOx semiconductors

Y. C. Lin; H. L. Chung; Wu-Ching Chou; Wei-Kuo Chen; Wen-Hao Chang; C. Y. Chen; J. I. Chyi

doi:10.1063/1.3473776

Carrier dynamics in isoelectronic ZnSe_1-xO_x semiconductors

Y. C. Lin, H. L. Chung, Wu-Ching Chou, Wei-Kuo Chen, Wen-Hao Chang, C. Y. Chen, J. I. Chyi

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe_1-xO_x (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. These findings are consistent with the initial fall in the stretching exponent β followed by its monotonic increase with increasing temperature.

Original language	English
Article number	041909
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	97
Issue number	4
DOIs	https://doi.org/10.1063/1.3473776
State	Published - 26 Jul 2010

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abstract = "This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe1-xOx (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. These findings are consistent with the initial fall in the stretching exponent β followed by its monotonic increase with increasing temperature.",

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AU - Chung, H. L.

AU - Chou, Wu-Ching

AU - Chen, Wei-Kuo

AU - Chang, Wen-Hao

AU - Chen, C. Y.

AU - Chyi, J. I.

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AB - This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe1-xOx (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. These findings are consistent with the initial fall in the stretching exponent β followed by its monotonic increase with increasing temperature.

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Carrier dynamics in isoelectronic ZnSe_1-xO_x semiconductors

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