Abstract
In this report, we investigated ultrafast carrier dynamics of vertically aligned indium nitride (InN) nanorod (NR) arrays grown by molecular-beam epitaxy on Si(111) substrates. Dominant band filling effects were observed and were attributed to a partial bleaching of absorption at the probe wavelengths near the absorption edge. Carrier relaxation in nanorod samples was strongly dependent on the rod size and length. In particular, a fast initial decay was observed for carriers in NRs with a small diameter (̃30 nm), the lifetime of which is much shorter than the carrier cooling time, demonstrating the substantial surface-associated influence on carrier relaxation in semiconductor nanostructures.
| Original language | English |
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| Pages (from-to) | 769-775 |
| Number of pages | 7 |
| Journal | Optics Express |
| Volume | 20 |
| Issue number | 2 |
| DOIs | |
| State | Published - 16 Jan 2012 |