Carrier dynamics in dilute II-VI oxide highly mismatched alloys

Yan Cheng Lin; Wu-Ching Chou; Jen Inn Chyi; Tooru Tanaka

doi:10.1117/12.2039837

Carrier dynamics in dilute II-VI oxide highly mismatched alloys

Yan Cheng Lin, Wu-Ching Chou, Jen Inn Chyi, Tooru Tanaka

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This study explores comprehensively the carrier dynamics in ZnSeO and ZnTeO using photoluminescence (PL) and time-resolved PL spectroscopy. As the O concentration increases, the PL emissions shift toward lower energies. Additionally, the PL lifetime increases with increasing O contents and the decay curves exhibit complex behavior. In the case of ZnSeO, the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. The incorporation of O in ZnTe generates a wide distribution of electron localization below the energy of the E_- conduction subband, and these cause broad PL emission and serve as another intermediate band. Electrons in both the E₊ and the E_- conduction subbands favor rapid relaxation to low energy states. Moreover, temperature-independent long carrier lifetimes (> 130.0 ns) that are induced by localized electrons increase with O concentration.

Original language	English
Title of host publication	Oxide-Based Materials and Devices V
Publisher	SPIE
ISBN (Print)	9780819499004
DOIs	https://doi.org/10.1117/12.2039837
State	Published - 1 Jan 2014
Event	5th Annual Oxide Based Materials and Devices Conference - San Francisco, CA, United States Duration: 2 Feb 2014 → 5 Feb 2014

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8987
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	5th Annual Oxide Based Materials and Devices Conference
Country/Territory	United States
City	San Francisco, CA
Period	2/02/14 → 5/02/14

Keywords

Carrier dynamics
Highly mismatched alloys
II-VI oxides
Intermediate band
Time-resolved photoluminescence
ZnSeO
ZnTeO

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10.1117/12.2039837

Cite this

@inproceedings{f21075537d4a4f1789e335f16b6fc1da,

title = "Carrier dynamics in dilute II-VI oxide highly mismatched alloys",

abstract = "This study explores comprehensively the carrier dynamics in ZnSeO and ZnTeO using photoluminescence (PL) and time-resolved PL spectroscopy. As the O concentration increases, the PL emissions shift toward lower energies. Additionally, the PL lifetime increases with increasing O contents and the decay curves exhibit complex behavior. In the case of ZnSeO, the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. The incorporation of O in ZnTe generates a wide distribution of electron localization below the energy of the E- conduction subband, and these cause broad PL emission and serve as another intermediate band. Electrons in both the E+ and the E- conduction subbands favor rapid relaxation to low energy states. Moreover, temperature-independent long carrier lifetimes (> 130.0 ns) that are induced by localized electrons increase with O concentration.",

keywords = "Carrier dynamics, Highly mismatched alloys, II-VI oxides, Intermediate band, Time-resolved photoluminescence, ZnSeO, ZnTeO",

author = "Lin, {Yan Cheng} and Wu-Ching Chou and Chyi, {Jen Inn} and Tooru Tanaka",

year = "2014",

month = jan,

day = "1",

doi = "10.1117/12.2039837",

language = "English",

isbn = "9780819499004",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

booktitle = "Oxide-Based Materials and Devices V",

address = "美國",

note = "5th Annual Oxide Based Materials and Devices Conference ; Conference date: 02-02-2014 Through 05-02-2014",

}

Lin, YC, Chou, W-C, Chyi, JI & Tanaka, T 2014, Carrier dynamics in dilute II-VI oxide highly mismatched alloys. in Oxide-Based Materials and Devices V., 89870D, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8987, SPIE, 5th Annual Oxide Based Materials and Devices Conference, San Francisco, CA, United States, 2/02/14. https://doi.org/10.1117/12.2039837

TY - GEN

T1 - Carrier dynamics in dilute II-VI oxide highly mismatched alloys

AU - Lin, Yan Cheng

AU - Chou, Wu-Ching

AU - Chyi, Jen Inn

AU - Tanaka, Tooru

PY - 2014/1/1

Y1 - 2014/1/1

N2 - This study explores comprehensively the carrier dynamics in ZnSeO and ZnTeO using photoluminescence (PL) and time-resolved PL spectroscopy. As the O concentration increases, the PL emissions shift toward lower energies. Additionally, the PL lifetime increases with increasing O contents and the decay curves exhibit complex behavior. In the case of ZnSeO, the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. The incorporation of O in ZnTe generates a wide distribution of electron localization below the energy of the E- conduction subband, and these cause broad PL emission and serve as another intermediate band. Electrons in both the E+ and the E- conduction subbands favor rapid relaxation to low energy states. Moreover, temperature-independent long carrier lifetimes (> 130.0 ns) that are induced by localized electrons increase with O concentration.

AB - This study explores comprehensively the carrier dynamics in ZnSeO and ZnTeO using photoluminescence (PL) and time-resolved PL spectroscopy. As the O concentration increases, the PL emissions shift toward lower energies. Additionally, the PL lifetime increases with increasing O contents and the decay curves exhibit complex behavior. In the case of ZnSeO, the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. The incorporation of O in ZnTe generates a wide distribution of electron localization below the energy of the E- conduction subband, and these cause broad PL emission and serve as another intermediate band. Electrons in both the E+ and the E- conduction subbands favor rapid relaxation to low energy states. Moreover, temperature-independent long carrier lifetimes (> 130.0 ns) that are induced by localized electrons increase with O concentration.

KW - Carrier dynamics

KW - Highly mismatched alloys

KW - II-VI oxides

KW - Intermediate band

KW - Time-resolved photoluminescence

KW - ZnSeO

KW - ZnTeO

UR - http://www.scopus.com/inward/record.url?scp=84901808460&partnerID=8YFLogxK

U2 - 10.1117/12.2039837

DO - 10.1117/12.2039837

M3 - Conference contribution

AN - SCOPUS:84901808460

SN - 9780819499004

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Oxide-Based Materials and Devices V

PB - SPIE

T2 - 5th Annual Oxide Based Materials and Devices Conference

Y2 - 2 February 2014 through 5 February 2014

ER -

Carrier dynamics in dilute II-VI oxide highly mismatched alloys

Abstract

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Keywords

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