Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes

Jenn-Fang Chen; P. Y. Wang; J. S. Wang; C. Y. Tsai; N. C. Chen

doi:10.1063/1.372022

Carrier depletion by defects levels in relaxed In_0.2Ga_0.8As/GaAs quantum-well Schottky diodes

Jenn-Fang Chen^*, P. Y. Wang, J. S. Wang, C. Y. Tsai, N. C. Chen

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

An increase in leakage current accompanied by a drastic carrier depletion is found for InGaAs/GaAs Schottky diodes when the InGaAs thickness is larger than its critical thickness. Due to drastic carrier depletion, free-carrier concentration around the InGaAs region for relaxed samples cannot be obtained from capacitance-voltage data but from resistance-capacitance time constant effect observed in capacitance-frequency measurement. A trap at 0.33 to 0.49 eV is observed for relaxed samples by deep-level transient spectroscopy. The resistance caused by carrier depletion has an activation energy close to that of the trap, supporting that the carrier depletion is caused by capture from the trap.

Original language	English
Pages (from-to)	1369-1373
Number of pages	5
Journal	Journal of Applied Physics
Volume	87
Issue number	3
DOIs	https://doi.org/10.1063/1.372022
State	Published - Feb 2000

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title = "Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes",

abstract = "An increase in leakage current accompanied by a drastic carrier depletion is found for InGaAs/GaAs Schottky diodes when the InGaAs thickness is larger than its critical thickness. Due to drastic carrier depletion, free-carrier concentration around the InGaAs region for relaxed samples cannot be obtained from capacitance-voltage data but from resistance-capacitance time constant effect observed in capacitance-frequency measurement. A trap at 0.33 to 0.49 eV is observed for relaxed samples by deep-level transient spectroscopy. The resistance caused by carrier depletion has an activation energy close to that of the trap, supporting that the carrier depletion is caused by capture from the trap.",

author = "Jenn-Fang Chen and Wang, {P. Y.} and Wang, {J. S.} and Tsai, {C. Y.} and Chen, {N. C.}",

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AU - Chen, Jenn-Fang

AU - Wang, P. Y.

AU - Wang, J. S.

AU - Tsai, C. Y.

AU - Chen, N. C.

PY - 2000/2

Y1 - 2000/2

N2 - An increase in leakage current accompanied by a drastic carrier depletion is found for InGaAs/GaAs Schottky diodes when the InGaAs thickness is larger than its critical thickness. Due to drastic carrier depletion, free-carrier concentration around the InGaAs region for relaxed samples cannot be obtained from capacitance-voltage data but from resistance-capacitance time constant effect observed in capacitance-frequency measurement. A trap at 0.33 to 0.49 eV is observed for relaxed samples by deep-level transient spectroscopy. The resistance caused by carrier depletion has an activation energy close to that of the trap, supporting that the carrier depletion is caused by capture from the trap.

AB - An increase in leakage current accompanied by a drastic carrier depletion is found for InGaAs/GaAs Schottky diodes when the InGaAs thickness is larger than its critical thickness. Due to drastic carrier depletion, free-carrier concentration around the InGaAs region for relaxed samples cannot be obtained from capacitance-voltage data but from resistance-capacitance time constant effect observed in capacitance-frequency measurement. A trap at 0.33 to 0.49 eV is observed for relaxed samples by deep-level transient spectroscopy. The resistance caused by carrier depletion has an activation energy close to that of the trap, supporting that the carrier depletion is caused by capture from the trap.

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DO - 10.1063/1.372022

M3 - Article

AN - SCOPUS:0347055385

SN - 0021-8979

VL - 87

SP - 1369

EP - 1373

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

Carrier depletion by defects levels in relaxed In_0.2Ga_0.8As/GaAs quantum-well Schottky diodes

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