Carbon/Nitrogen Dual-Doped in <100> P-Type Silicon Hard Mask for Wafer Thinning and Dishing Less for Hybrid Bonding

Yen Shuo Chen, Tzu Wei Chiu, Hua Tai Fan, Yu Chien Ko, Chu Chi Chen, Fu Hsiang Ko

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Wafer thinning technology can provide high-density interconnections for integrated circuits, reduce power loss, and fulfill the demand for thin and miniaturized packaging of devices, thus realizing the goal of comprehensively improving the performance of semiconductor devices. Higher density chip connectivity through dual ion selective higher etch Ratio, lower on-resistance and ultra-thin die packages.

Original languageEnglish
Title of host publication2024 International Conference on Electronics Packaging, ICEP 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages75-76
Number of pages2
ISBN (Electronic)9784991191176
DOIs
StatePublished - 2024
Event23rd International Conference on Electronics Packaging, ICEP 2024 - Toyama, Japan
Duration: 17 Apr 202420 Apr 2024

Publication series

Name2024 International Conference on Electronics Packaging, ICEP 2024

Conference

Conference23rd International Conference on Electronics Packaging, ICEP 2024
Country/TerritoryJapan
CityToyama
Period17/04/2420/04/24

Keywords

  • Carbon dope
  • CMP
  • Hybrid bonding
  • Nitrogen dope
  • Wafer-thinning

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