+Capacitance-voltage characteristics of BiFeO3∕SrTiO3∕GaN heteroepitaxial structures

S. Y. Yang*, Q. Zhan, P. L. Yang, M. P. Cruz, Ying-hao Chu, R. Ramesh, Y. R. Wu, J. Singh, W. Tian, D. G. Schlom

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

55 Scopus citations


The authors report the integration of multiferroic BiFe O3 films with the semiconductor GaN using liquid-delivery metal-organic chemical-vapor deposition. Epitaxial BiFe O3 films were deposited via interface control using SrTi O3 buffer/template layers. The growth orientation relationship was found to be (111) [1 1- 0] BiFe O3 ∥ (111) [1 1- 0] SrTi O3 ∥ (0001) [11 2- 0] GaN, with in-plane 180° rotational twins. The C-V characteristics of a PtBiFe O3 SrTi O3 GaN capacitor exhibited hysteresis with a memory window of ∼3 V at a sweeping voltage of ±30 V.

Original languageEnglish
Article number022909
JournalApplied Physics Letters
Issue number2
StatePublished - 1 Aug 2007


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