Calculation of sputtering rate by a Monte Carlo method

J. H. Hsieh*, C. Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The sputtering rate during a plasma-assisted process was calculated. Monte Carlo simulation was used for the calculation. It was observed that sputtering was one of the most important mechanisms occurring on the cathod during a plasma-assisted process.

Original languageEnglish
Pages (from-to)1125-1126
Number of pages2
JournalJournal of Materials Science Letters
Volume22
Issue number16
DOIs
StatePublished - 15 Aug 2003

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