Calculation of high-field diffusivity by a many-particle Monte Carlo simulation including a complete band structure for GaAs

Ta-Hui Wang; K. Hess

doi:10.1063/1.333811

Calculation of high-field diffusivity by a many-particle Monte Carlo simulation including a complete band structure for GaAs

Ta-Hui Wang^*, K. Hess

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The electron diffusion coefficients of GaAs in the high-field regime ranging from 10 to 500 kV/cm have been calculated by a many-particle Monte Carlo simulation. The band-structure model in the simulation, calculated using the empirical pseudopotential method, includes the lowest two conduction bands and the full many-valley structure for each band. Our calculation shows that the diffusivity decreases drastically (by a factor of ≊30) as the field increases from 10 to 250 kV/cm and extremely low diffusion coefficients, 1.1 cm²/s for D₁ and 6.1 cm²/s for D_t, are obtained at ≊250 kV/cm for GaAs.

Original language	English
Pages (from-to)	2793-2795
Number of pages	3
Journal	Journal of Applied Physics
Volume	56
Issue number	10
DOIs	https://doi.org/10.1063/1.333811
State	Published - 1984

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title = "Calculation of high-field diffusivity by a many-particle Monte Carlo simulation including a complete band structure for GaAs",

abstract = "The electron diffusion coefficients of GaAs in the high-field regime ranging from 10 to 500 kV/cm have been calculated by a many-particle Monte Carlo simulation. The band-structure model in the simulation, calculated using the empirical pseudopotential method, includes the lowest two conduction bands and the full many-valley structure for each band. Our calculation shows that the diffusivity decreases drastically (by a factor of ≊30) as the field increases from 10 to 250 kV/cm and extremely low diffusion coefficients, 1.1 cm2/s for D1 and 6.1 cm2/s for Dt, are obtained at ≊250 kV/cm for GaAs.",

author = "Ta-Hui Wang and K. Hess",

year = "1984",

doi = "10.1063/1.333811",

language = "English",

volume = "56",

pages = "2793--2795",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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T1 - Calculation of high-field diffusivity by a many-particle Monte Carlo simulation including a complete band structure for GaAs

AU - Wang, Ta-Hui

AU - Hess, K.

PY - 1984

Y1 - 1984

N2 - The electron diffusion coefficients of GaAs in the high-field regime ranging from 10 to 500 kV/cm have been calculated by a many-particle Monte Carlo simulation. The band-structure model in the simulation, calculated using the empirical pseudopotential method, includes the lowest two conduction bands and the full many-valley structure for each band. Our calculation shows that the diffusivity decreases drastically (by a factor of ≊30) as the field increases from 10 to 250 kV/cm and extremely low diffusion coefficients, 1.1 cm2/s for D1 and 6.1 cm2/s for Dt, are obtained at ≊250 kV/cm for GaAs.

AB - The electron diffusion coefficients of GaAs in the high-field regime ranging from 10 to 500 kV/cm have been calculated by a many-particle Monte Carlo simulation. The band-structure model in the simulation, calculated using the empirical pseudopotential method, includes the lowest two conduction bands and the full many-valley structure for each band. Our calculation shows that the diffusivity decreases drastically (by a factor of ≊30) as the field increases from 10 to 250 kV/cm and extremely low diffusion coefficients, 1.1 cm2/s for D1 and 6.1 cm2/s for Dt, are obtained at ≊250 kV/cm for GaAs.

UR - http://www.scopus.com/inward/record.url?scp=0021517156&partnerID=8YFLogxK

U2 - 10.1063/1.333811

DO - 10.1063/1.333811

M3 - Article

AN - SCOPUS:0021517156

SN - 0021-8979

VL - 56

SP - 2793

EP - 2795

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Calculation of high-field diffusivity by a many-particle Monte Carlo simulation including a complete band structure for GaAs

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