Built-in effective body-bias effect in ultra-thin-body hetero-channel III - V-on-Insulator n-MOSFETs

This letter reports a built-in effective body-bias effect in ultra-thin-body (UTB) hetero-channel III-V-on-insulator n-MOSFETs. This effect results from the discrepancies in electron affinity and the effective density-of-states of conduction band between the III-V and conventional Si channels. Our study indicates that, in addition to permittivity, it is the built-in effective body-bias effect that determines the drain-induced-barrier- lowering characteristics of the hetero-channel devices. This intrinsic effect has to be considered when one-to-one comparisons among various UTB hetero-channel MOSFETs regarding the electrostatic integrity are made.