Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages

Keyphrases

• GaN-on-Si 100%
• High Electron Mobility Transistor 100%
• Trapping Effects 100%
• Buffer Traps 100%
• Acceptor Trap 100%
• Substrate Voltage 100%
• Superlattice 66%
• Charge Redistribution 66%
• Donor Traps 66%
• Ionized Donor 66%
• Ohmic Contact 33%
• Vertical Electric Field 33%
• Electrical Performance 33%
• Front Surface 33%
• P-n Junction 33%
• GaN Layers 33%
• Non-uniform Distribution 33%
• Breakdown Voltage 33%
• Field Effect 33%
• Donor-acceptor 33%
• Depletion Region 33%
• Power Applications 33%
• Application Performance 33%
• Stacked Layer 33%
• AlN nucleation Layer 33%
• Carbon-doped GaN 33%
• Dynamic RON 33%
• Doped Carbon 33%
• Transition Layer 33%
• Energy Band Bending 33%
• 2DEG Channel 33%
• Transition Layer Structure 33%

Engineering

• Stack Buffer 100%
• Ohmic Contacts 50%
• Electrical Performance 50%
• Back Side 50%
• Front Side 50%
• Breakdown Voltage 50%
• Depletion Region 50%
• Layer Structure 50%
• Band Bending 50%
• Energy Band 50%
• Pn Junction 50%
• Layer Superlattice 50%
• Application Performance 50%
• Electric Field 50%
• Superlattice 50%

Material Science

• Transistor 100%
• Electron Mobility 100%
• Superlattice 100%
• Nucleation 50%
• Aluminum Nitride 50%