BSIMPD: a partial-depletion SOI MOSFET model for deep-submicron CMOS designs

Pin Su; Samuel K.H. Fung; Stephen Tang; Fariborz Assaderaghi; Chen-Ming Hu

doi:10.1109/CICC.2000.852647

BSIMPD: a partial-depletion SOI MOSFET model for deep-submicron CMOS designs

Pin Su^*
, Samuel K.H. Fung
, Stephen Tang
, Fariborz Assaderaghi
, Chen-Ming Hu

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

37 Scopus citations

Abstract

BSIMPD- a physics-based SPICE model is developed for bridging deep-submicron CMOS designs using partially-depleted SOI technologies. Formulated on top of the industry-standard bulk-MOSFET model BSIM3v3 for a sound base of scalability and robustness, BSIMPD captures SOI-specific dynamic behaviors with its built-in floating-body, self-heating and body-contact models. A parameter-extraction strategy is demonstrated, and the simulation efficiency is studied. The model has been tested extensively within IBM on state-of-the-art high speed SOI technologies. It has been implemented in many circuit simulators.

Original language	English
Pages (from-to)	197-200
Number of pages	4
Journal	Proceedings of the Custom Integrated Circuits Conference
DOIs	https://doi.org/10.1109/CICC.2000.852647
State	Published - 2000
Event	CICC 2000: 22nd Annual Custom Integrated Circuits Conference - Orlando, FL, USA Duration: 21 May 2000 → 24 May 2000

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title = "BSIMPD: a partial-depletion SOI MOSFET model for deep-submicron CMOS designs",

abstract = "BSIMPD- a physics-based SPICE model is developed for bridging deep-submicron CMOS designs using partially-depleted SOI technologies. Formulated on top of the industry-standard bulk-MOSFET model BSIM3v3 for a sound base of scalability and robustness, BSIMPD captures SOI-specific dynamic behaviors with its built-in floating-body, self-heating and body-contact models. A parameter-extraction strategy is demonstrated, and the simulation efficiency is studied. The model has been tested extensively within IBM on state-of-the-art high speed SOI technologies. It has been implemented in many circuit simulators.",

author = "Pin Su and Fung, \{Samuel K.H.\} and Stephen Tang and Fariborz Assaderaghi and Chen-Ming Hu",

year = "2000",

doi = "10.1109/CICC.2000.852647",

language = "English",

pages = "197--200",

journal = "Proceedings of the Custom Integrated Circuits Conference",

issn = "0886-5930",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "CICC 2000: 22nd Annual Custom Integrated Circuits Conference ; Conference date: 21-05-2000 Through 24-05-2000",

}

TY - JOUR

T1 - BSIMPD

T2 - CICC 2000: 22nd Annual Custom Integrated Circuits Conference

AU - Su, Pin

AU - Fung, Samuel K.H.

AU - Tang, Stephen

AU - Assaderaghi, Fariborz

AU - Hu, Chen-Ming

PY - 2000

Y1 - 2000

N2 - BSIMPD- a physics-based SPICE model is developed for bridging deep-submicron CMOS designs using partially-depleted SOI technologies. Formulated on top of the industry-standard bulk-MOSFET model BSIM3v3 for a sound base of scalability and robustness, BSIMPD captures SOI-specific dynamic behaviors with its built-in floating-body, self-heating and body-contact models. A parameter-extraction strategy is demonstrated, and the simulation efficiency is studied. The model has been tested extensively within IBM on state-of-the-art high speed SOI technologies. It has been implemented in many circuit simulators.

AB - BSIMPD- a physics-based SPICE model is developed for bridging deep-submicron CMOS designs using partially-depleted SOI technologies. Formulated on top of the industry-standard bulk-MOSFET model BSIM3v3 for a sound base of scalability and robustness, BSIMPD captures SOI-specific dynamic behaviors with its built-in floating-body, self-heating and body-contact models. A parameter-extraction strategy is demonstrated, and the simulation efficiency is studied. The model has been tested extensively within IBM on state-of-the-art high speed SOI technologies. It has been implemented in many circuit simulators.

UR - https://www.scopus.com/pages/publications/0033698080

U2 - 10.1109/CICC.2000.852647

DO - 10.1109/CICC.2000.852647

M3 - Conference article

AN - SCOPUS:0033698080

SN - 0886-5930

SP - 197

EP - 200

JO - Proceedings of the Custom Integrated Circuits Conference

JF - Proceedings of the Custom Integrated Circuits Conference

Y2 - 21 May 2000 through 24 May 2000

ER -

BSIMPD: a partial-depletion SOI MOSFET model for deep-submicron CMOS designs

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