BSIM-MG: A versatile multi-gate FET model for mixed-signal design

Mohan V. Dunga; Chung Hsun Lin; Darsen D. Lu; Weize Xiong; C. R. Cleavelin; P. Patruno; Jiunn Ren Hwang; Fu Liang Yang; Ali M. Niknejad; Chen-Ming Hu

doi:10.1109/VLSIT.2007.4339727

BSIM-MG: A versatile multi-gate FET model for mixed-signal design

Mohan V. Dunga, Chung Hsun Lin, Darsen D. Lu, Weize Xiong, C. R. Cleavelin, P. Patruno, Jiunn Ren Hwang, Fu Liang Yang, Ali M. Niknejad, Chen-Ming Hu

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

47 Scopus citations

Abstract

A novel surface-potential based multi-gate FET (MG-FET) compact model has been developed for mixed-signal design applications. For the first time, a MG-FET model captures the effect of finite body doping on the electrical behavior of MG-FETs. A unique field penetration length model has been developed to model the short channel effects in MG-FETs. A multitude of physical effects such as poly-depletion effect and quantum-mechanical effect (QME) have been incorporated. The expressions for terminal currents and charges are ∞-continuous making the model suitable for mixed-signal design. The model has been verified extensively with TCAD and experimental data.

Original language	English
Article number	4339727
Pages (from-to)	60-61
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.2007.4339727
State	Published - 2007
Event	2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japan Duration: 12 Jun 2007 → 14 Jun 2007

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title = "BSIM-MG: A versatile multi-gate FET model for mixed-signal design",

abstract = "A novel surface-potential based multi-gate FET (MG-FET) compact model has been developed for mixed-signal design applications. For the first time, a MG-FET model captures the effect of finite body doping on the electrical behavior of MG-FETs. A unique field penetration length model has been developed to model the short channel effects in MG-FETs. A multitude of physical effects such as poly-depletion effect and quantum-mechanical effect (QME) have been incorporated. The expressions for terminal currents and charges are ∞-continuous making the model suitable for mixed-signal design. The model has been verified extensively with TCAD and experimental data.",

author = "Dunga, {Mohan V.} and Lin, {Chung Hsun} and Lu, {Darsen D.} and Weize Xiong and Cleavelin, {C. R.} and P. Patruno and Hwang, {Jiunn Ren} and Yang, {Fu Liang} and Niknejad, {Ali M.} and Chen-Ming Hu",

year = "2007",

doi = "10.1109/VLSIT.2007.4339727",

language = "English",

pages = "60--61",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 Symposium on VLSI Technology, VLSIT 2007 ; Conference date: 12-06-2007 Through 14-06-2007",

}

TY - JOUR

T1 - BSIM-MG

T2 - 2007 Symposium on VLSI Technology, VLSIT 2007

AU - Dunga, Mohan V.

AU - Lin, Chung Hsun

AU - Lu, Darsen D.

AU - Xiong, Weize

AU - Cleavelin, C. R.

AU - Patruno, P.

AU - Hwang, Jiunn Ren

AU - Yang, Fu Liang

AU - Niknejad, Ali M.

AU - Hu, Chen-Ming

PY - 2007

Y1 - 2007

N2 - A novel surface-potential based multi-gate FET (MG-FET) compact model has been developed for mixed-signal design applications. For the first time, a MG-FET model captures the effect of finite body doping on the electrical behavior of MG-FETs. A unique field penetration length model has been developed to model the short channel effects in MG-FETs. A multitude of physical effects such as poly-depletion effect and quantum-mechanical effect (QME) have been incorporated. The expressions for terminal currents and charges are ∞-continuous making the model suitable for mixed-signal design. The model has been verified extensively with TCAD and experimental data.

AB - A novel surface-potential based multi-gate FET (MG-FET) compact model has been developed for mixed-signal design applications. For the first time, a MG-FET model captures the effect of finite body doping on the electrical behavior of MG-FETs. A unique field penetration length model has been developed to model the short channel effects in MG-FETs. A multitude of physical effects such as poly-depletion effect and quantum-mechanical effect (QME) have been incorporated. The expressions for terminal currents and charges are ∞-continuous making the model suitable for mixed-signal design. The model has been verified extensively with TCAD and experimental data.

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U2 - 10.1109/VLSIT.2007.4339727

DO - 10.1109/VLSIT.2007.4339727

M3 - Conference article

AN - SCOPUS:38649083893

SN - 0743-1562

SP - 60

EP - 61

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

M1 - 4339727

Y2 - 12 June 2007 through 14 June 2007

ER -

BSIM-MG: A versatile multi-gate FET model for mixed-signal design

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