BSIM-CMG: A compact model for multi-gate transistors

Keyphrases

• Compact Model 100%
• Short Channel 100%
• Multi-gate 100%
• Berkeley 100%
• Multigate Transistor 100%
• Multiple-Gate MOSFETs (MuGFETs) 83%
• Process Technology 33%
• Circuit Design 33%
• Transistor 33%
• Device Physics 33%
• Technology Design 33%
• Planar CMOS 33%
• Mathematical Description 33%
• Fin Field-effect Transistor (FinFET) 16%
• CMOS Scaling 16%
• Accurate Model 16%
• Gate Leakage 16%
• Product Design 16%
• Process Engineer 16%
• Dielectric Thickness 16%
• TCAD Simulation 16%
• Subthreshold Leakage Current 16%
• Co-optimization 16%
• Available Silicon 16%
• Computer Analysis 16%
• Subthreshold Region 16%
• Multiple Gate 16%
• Large-scale Fabrication 16%
• Fast Analysis 16%
• FET Circuits 16%
• Electrostatic Control 16%
• Circuit Development 16%
• Data Scalability 16%
• Fine Balance 16%

Engineering

• Field Effect Transistor 100%
• Circuit Design 50%
• Circuit Designer 50%
• Mathematical Description 50%
• Dielectrics 25%
• Metal-Oxide-Semiconductor Field-Effect Transistor 25%
• Product Design 25%
• Promising Candidate 25%
• Electrostatic Force 25%

Material Science

• Transistor 100%
• Electronic Circuit 100%
• Field Effect Transistor 44%
• Silicon 11%
• Metal-Oxide-Semiconductor Field-Effect Transistor 11%
• Dielectric Material 11%