BSD-protection design with extra low-leakage-current diode string for RF circuits in SiGe BiCMOS process

Ming-Dou Ker*, Yuan Wen Hsiao, Woei Lin Wu

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    14 Scopus citations

    Abstract

    Two low-leakage resistor-shunted diode strings are developed for use as power clamps in silicon-germanium (SiGe) BiCMOS technology. The resistors are used to bias the deep N-wells, significantly reducing the leakage current from the diode string. A methodology for selecting the values of the bias resistors is presented. For further reduction of the leakage current, an alternate design is presented: the resistor-shunted trigger bipolar power clamp. The power-clamp circuits presented herein may be used in cooperation with small double diodes at the I/O pins to achieve whole-chip electrostatic-discharge protection for RF ICs in SiGe processes.

    Original languageEnglish
    Pages (from-to)517-527
    Number of pages11
    JournalIEEE Transactions on Device and Materials Reliability
    Volume6
    Issue number4
    DOIs
    StatePublished - 1 Dec 2006

    Keywords

    • Electrostatic discharge (ESD)
    • Modified resistor-shunted diode string (MR diode string)
    • MR trigger bipolar ESD power clamp
    • Power-rail ESD clamp circuit
    • Resistor-shunted diode string (RS diode string)
    • RS trigger bipolar ESD power clamp

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