Broadband GaInP/GaAs HBT regenerative frequency divider with active loads

Hung Ju Wei*, Chin-Chun Meng, Yu Wen Chang, Guo Wei Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) regenerative frequency divider (RFD) with active loads is demonstrated at 4 GHz-26 GHz. In this work, the RFDs with resistive loads and active loads are fabricated in the same chip for comparison. From the measured results, the active-loading type obviously has wider operating frequency and lower input sensitivity. The fmax/fmin ratio of 6.5 is higher than that of general RFDs. The core power consumption is 36.7mW at the supply voltage of 5 V. The chip size is 1.0 × 1.0 mm2.

Original languageEnglish
Title of host publication2007 IEEE MTT-S International Microwave Symposium Digest
Pages2181-2184
Number of pages4
DOIs
StatePublished - 2007
Event2007 IEEE MTT-S International Microwave Symposium, IMS 2007 - Honolulu, HI, United States
Duration: 3 Jun 20078 Jun 2007

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2007 IEEE MTT-S International Microwave Symposium, IMS 2007
Country/TerritoryUnited States
CityHonolulu, HI
Period3/06/078/06/07

Keywords

  • Active load
  • Double-balanced mixer
  • GaInP/GaAs HBT
  • RFD
  • Regenerative frequency divider
  • Resistive load

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