TY - JOUR
T1 - Bright Mid-Wave Infrared Resonant-Cavity Light-Emitting Diodes Based on Black Phosphorus
AU - Gupta, Niharika
AU - Kim, Hyungjin
AU - Azar, Nima Sefidmooye
AU - Uddin, Shiekh Zia
AU - Lien, Der Hsien
AU - Crozier, Kenneth B.
AU - Javey, Ali
N1 - Publisher Copyright:
© 2021 American Chemical Society.
PY - 2021
Y1 - 2021
N2 - The mid-wave infrared (MWIR) wavelength range plays a central role in a variety of applications, including optical gas sensing, industrial process control, spectroscopy, and infrared (IR) countermeasures. Among the MWIR light sources, light-emitting diodes (LEDs) have the advantages of simple design, room-temperature operation, and low cost. Owing to the low Auger recombination at high carrier densities and direct bandgap of black phosphorus (bP), it can serve as a high quantum efficiency emitting layer in LEDs. In this work, we demonstrate bP-LEDs exhibiting high external quantum efficiencies and wall-plug efficiencies of up to 4.43 and 1.78%, respectively. This is achieved by integrating the device with an Al2O3/Au optical cavity, which enhances the emission efficiency, and a thin transparent conducing oxide [indium tin oxide (ITO)] layer, which reduces the parasitic resistance, both resulting in order of magnitude improvements to performance.
AB - The mid-wave infrared (MWIR) wavelength range plays a central role in a variety of applications, including optical gas sensing, industrial process control, spectroscopy, and infrared (IR) countermeasures. Among the MWIR light sources, light-emitting diodes (LEDs) have the advantages of simple design, room-temperature operation, and low cost. Owing to the low Auger recombination at high carrier densities and direct bandgap of black phosphorus (bP), it can serve as a high quantum efficiency emitting layer in LEDs. In this work, we demonstrate bP-LEDs exhibiting high external quantum efficiencies and wall-plug efficiencies of up to 4.43 and 1.78%, respectively. This is achieved by integrating the device with an Al2O3/Au optical cavity, which enhances the emission efficiency, and a thin transparent conducing oxide [indium tin oxide (ITO)] layer, which reduces the parasitic resistance, both resulting in order of magnitude improvements to performance.
KW - bP
KW - ITO
KW - LED
KW - light extraction efficiency
KW - parasitic resistance
KW - two-dimensional (2D) materials
UR - http://www.scopus.com/inward/record.url?scp=85124142861&partnerID=8YFLogxK
U2 - 10.1021/acs.nanolett.1c04557
DO - 10.1021/acs.nanolett.1c04557
M3 - Article
C2 - 35072481
AN - SCOPUS:85124142861
SN - 1530-6984
JO - Nano letters
JF - Nano letters
ER -