Boron Selective Emitter Formation with Un-metallized J0e of 13fA/cm2 for Silicon Solar Cell Applications

Ajay D. Upadhyaya, Keeya Madani, Vijaykumar Upadhyaya, Brian Rounsaville, Ying Yuan Huang, Ajeet Rohatgi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

This paper describes the development of a novel selective boron emitter formed a screen-printed negative resist to form vias for heavily doping regions. Ion-implantation and atmospheric pressure chemical vapor deposition (APCVD) are used to from the field (p+) and heavily doped regions (p++) of the emitters, respectively. This approach gives better control over the surface concentrations/junction depth for each region of the emitter resulting in very low full area emitter dark saturation current density (J0e) of 6fA/cm2 for the lightly doped regions and ~93fA/cm2 for the heavily doped regions. Very low un-metallized J0e of 13fA/cm2 and 18fA/cm2 were achieved for selective emitters with 30\ \Omega/\square\ \mathrm{p}^{++} region in combination with 200 and 150\ \Omega/\square ion-implanted p+ regions respectively. A metallized J0e of 28fA/cm2 was achieved with 3% screen-printed metal grid contact coverage to p++ regions of the selective emitter. This selective emitter gave 0.4% absolute increase in efficiency over standard NPERT with a 150\ \Omega/\square homogeneous emitter.

Original languageEnglish
Title of host publication2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1626-1629
Number of pages4
ISBN (Electronic)9781728161150
DOIs
StatePublished - 14 Jun 2020
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: 15 Jun 202021 Aug 2020

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2020-June
ISSN (Print)0160-8371

Conference

Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/TerritoryCanada
CityCalgary
Period15/06/2021/08/20

Keywords

  • Boron
  • N-type
  • NPERT
  • selective emitter
  • TOPCon

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