Bond pad design with low capacitance in CMOS technology for RF applications

Yuan Wen Hsiao; Ming-Dou Ker

doi:10.1109/LED.2006.887631

Bond pad design with low capacitance in CMOS technology for RF applications

Yuan Wen Hsiao^*, Ming-Dou Ker

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A new bond pad structure in CMOS technology with low capacitance for gigahertz radio frequency applications is proposed. Three kinds of inductors stacked under the pad are used in the proposed bond pad structure. Experimental results have verified that the bond pad capacitance is reduced due to the cancellation effect provided by the inductor embedded in the proposed bond pad structure. The new proposed bond pad structure is fully process-compatible to general CMOS processes without any extra process modification.

Original language	English
Pages (from-to)	68-70
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	1
DOIs	https://doi.org/10.1109/LED.2006.887631
State	Published - 1 Jan 2007

Keywords

Bond pad
Capacitance
Loss
Radio frequency integrated circuit (RF IC)

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10.1109/LED.2006.887631

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abstract = "A new bond pad structure in CMOS technology with low capacitance for gigahertz radio frequency applications is proposed. Three kinds of inductors stacked under the pad are used in the proposed bond pad structure. Experimental results have verified that the bond pad capacitance is reduced due to the cancellation effect provided by the inductor embedded in the proposed bond pad structure. The new proposed bond pad structure is fully process-compatible to general CMOS processes without any extra process modification.",

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AB - A new bond pad structure in CMOS technology with low capacitance for gigahertz radio frequency applications is proposed. Three kinds of inductors stacked under the pad are used in the proposed bond pad structure. Experimental results have verified that the bond pad capacitance is reduced due to the cancellation effect provided by the inductor embedded in the proposed bond pad structure. The new proposed bond pad structure is fully process-compatible to general CMOS processes without any extra process modification.

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KW - Capacitance

KW - Loss

KW - Radio frequency integrated circuit (RF IC)

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Bond pad design with low capacitance in CMOS technology for RF applications

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Keywords

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