@inproceedings{01134e8b151d459baafce972c6441df8,
title = "Body voltage modulation for high performance a-IGZO TFT and its application on new inverter structure",
abstract = "We develop a new and simple method to adjust the threshold voltage of a-IGZO TFT by capping different metals on device back channel. A threshold voltage shifts from -7.4V to +5.5V can be obtained. The field-effect mobility is 2 to 3 times larger than the one before metal capping. An n-type a-IGZO inverter includes one enhancement-mode TFT (capped by titanium) and one depletion-mode TFT (capped by calcium/aluminum dual layer) is fabricated. The voltage gain is 38 when the bias voltage is 20 volts.",
author = "Hsiao-Wen Zan and Chen, {Wei Tsung} and Hsueh, {Hsiu Wen} and Yeh, {Chun Cheng} and Tsai, {Chuang Chuang} and Hsin-Fei Meng and Yeh, {Chia Chun} and Shinn, {Ted Hong}",
year = "2011",
month = dec,
day = "1",
language = "English",
isbn = "9781618390967",
series = "49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011",
pages = "1158--1161",
booktitle = "49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011",
note = "49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 ; Conference date: 15-05-2011 Through 20-05-2011",
}