Body-tied germanium tri-gate junctionless PMOSFET with in-situ boron doped channel

Che Wei Chen; Cheng Ting Chung; Ju Yuan Tzeng; Pang Sheng Chang; Guang Li Luo; Chao-Hsin Chien

doi:10.1109/LED.2013.2291394

Body-tied germanium tri-gate junctionless PMOSFET with in-situ boron doped channel

Che Wei Chen, Cheng Ting Chung, Ju Yuan Tzeng, Pang Sheng Chang, Guang Li Luo, Chao-Hsin Chien

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

In this letter, we demonstrate body-tied Ge tri-gate junctionless (JL) p-channelMOSFETs directly on Si. Our tri-gate JL-PFET exhibits higher current than the conventional inversionmode transistor through in-situ heavily doped technique and trimming down Ge fin width. We show that the JL-PFET with tri-gate structure has excellent I_ON/I_OFF ratio and good short channel effect control on the channel potential. The current ratio is of ∼6 × 10³ (I_D) at V_DS = -0.1 V, V _GS = -3, and 0 V. The relatively low OFF-current is of 6 nA/ μm at V_DS = -0.1 V and V_GS = 0 V. The subthreshold swing of 203 mV/decade and drain induced barrier lowering of 220 mV/V are reported at LG = 120 nm.

Original language	English
Article number	6684319
Pages (from-to)	12-14
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	1
DOIs	https://doi.org/10.1109/LED.2013.2291394
State	Published - 1 Jan 2014

Keywords

Junctionless
body-tied
germanium
in-situ heavily doped
tri-gate

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10.1109/LED.2013.2291394

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title = "Body-tied germanium tri-gate junctionless PMOSFET with in-situ boron doped channel",

abstract = "In this letter, we demonstrate body-tied Ge tri-gate junctionless (JL) p-channelMOSFETs directly on Si. Our tri-gate JL-PFET exhibits higher current than the conventional inversionmode transistor through in-situ heavily doped technique and trimming down Ge fin width. We show that the JL-PFET with tri-gate structure has excellent ION/IOFF ratio and good short channel effect control on the channel potential. The current ratio is of ∼6 × 103 (ID) at VDS = -0.1 V, V GS = -3, and 0 V. The relatively low OFF-current is of 6 nA/ μm at VDS = -0.1 V and VGS = 0 V. The subthreshold swing of 203 mV/decade and drain induced barrier lowering of 220 mV/V are reported at LG = 120 nm.",

keywords = "Junctionless, body-tied, germanium, in-situ heavily doped, tri-gate",

author = "Chen, {Che Wei} and Chung, {Cheng Ting} and Tzeng, {Ju Yuan} and Chang, {Pang Sheng} and Luo, {Guang Li} and Chao-Hsin Chien",

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T1 - Body-tied germanium tri-gate junctionless PMOSFET with in-situ boron doped channel

AU - Chen, Che Wei

AU - Chung, Cheng Ting

AU - Tzeng, Ju Yuan

AU - Chang, Pang Sheng

AU - Luo, Guang Li

AU - Chien, Chao-Hsin

PY - 2014/1/1

Y1 - 2014/1/1

N2 - In this letter, we demonstrate body-tied Ge tri-gate junctionless (JL) p-channelMOSFETs directly on Si. Our tri-gate JL-PFET exhibits higher current than the conventional inversionmode transistor through in-situ heavily doped technique and trimming down Ge fin width. We show that the JL-PFET with tri-gate structure has excellent ION/IOFF ratio and good short channel effect control on the channel potential. The current ratio is of ∼6 × 103 (ID) at VDS = -0.1 V, V GS = -3, and 0 V. The relatively low OFF-current is of 6 nA/ μm at VDS = -0.1 V and VGS = 0 V. The subthreshold swing of 203 mV/decade and drain induced barrier lowering of 220 mV/V are reported at LG = 120 nm.

AB - In this letter, we demonstrate body-tied Ge tri-gate junctionless (JL) p-channelMOSFETs directly on Si. Our tri-gate JL-PFET exhibits higher current than the conventional inversionmode transistor through in-situ heavily doped technique and trimming down Ge fin width. We show that the JL-PFET with tri-gate structure has excellent ION/IOFF ratio and good short channel effect control on the channel potential. The current ratio is of ∼6 × 103 (ID) at VDS = -0.1 V, V GS = -3, and 0 V. The relatively low OFF-current is of 6 nA/ μm at VDS = -0.1 V and VGS = 0 V. The subthreshold swing of 203 mV/decade and drain induced barrier lowering of 220 mV/V are reported at LG = 120 nm.

KW - Junctionless

KW - body-tied

KW - germanium

KW - in-situ heavily doped

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ER -

Body-tied germanium tri-gate junctionless PMOSFET with in-situ boron doped channel

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