Body-tied germanium FinFETs directly on a silicon substrate

Che Wei Chen; Cheng Ting Chung; Guang Li Luo; Chao-Hsin Chien

doi:10.1109/LED.2012.2217473

Body-tied germanium FinFETs directly on a silicon substrate

Che Wei Chen^*, Cheng Ting Chung, Guang Li Luo, Chao-Hsin Chien

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We fabricated body-tied Ge p-channel fin fieldeffect transistors (p-FinFETs) directly on a Si substrate with a high-?/metal gate stack. This scheme is fully compatible with Si standard processing. The FinFET structure has excellent control on the channel potential and thus can improve the short-channel effect. The diode with p?Si heterojunctions illustrates a remarkably high I_ON/I_OFF > 10⁶ despite the presence of misfit dislocations at the interface. The high-hole-mobility body-tied Ge p-FinFETs with a fin widthWFin of ∼40 nm and a mask channel length LMask of 120 nm depict a driving current of 22 μA/μm at _G = ?2 V and a low OFF-current of 3 nA/μm at V_G = 2 V. The subthreshold characteristics with a swing of 228 mV/dec and drain-induced barrier lowering of 288 mV/V are demonstrated..

Original language	English
Article number	6353504
Pages (from-to)	1678-1680
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	33
Issue number	12
DOIs	https://doi.org/10.1109/LED.2012.2217473
State	Published - 2012

Keywords

Body-tied fin field-effect transistors (FinFETs)
germanium
heterojunctions
high-mobility channel

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10.1109/LED.2012.2217473

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title = "Body-tied germanium FinFETs directly on a silicon substrate",

abstract = "We fabricated body-tied Ge p-channel fin fieldeffect transistors (p-FinFETs) directly on a Si substrate with a high-?/metal gate stack. This scheme is fully compatible with Si standard processing. The FinFET structure has excellent control on the channel potential and thus can improve the short-channel effect. The diode with p?Si heterojunctions illustrates a remarkably high ION/IOFF > 106 despite the presence of misfit dislocations at the interface. The high-hole-mobility body-tied Ge p-FinFETs with a fin widthWFin of ∼40 nm and a mask channel length LMask of 120 nm depict a driving current of 22 μA/μm at G = ?2 V and a low OFF-current of 3 nA/μm at VG = 2 V. The subthreshold characteristics with a swing of 228 mV/dec and drain-induced barrier lowering of 288 mV/V are demonstrated..",

keywords = "Body-tied fin field-effect transistors (FinFETs), germanium, heterojunctions, high-mobility channel",

author = "Chen, {Che Wei} and Chung, {Cheng Ting} and Luo, {Guang Li} and Chao-Hsin Chien",

year = "2012",

doi = "10.1109/LED.2012.2217473",

language = "English",

volume = "33",

pages = "1678--1680",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

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T1 - Body-tied germanium FinFETs directly on a silicon substrate

AU - Chen, Che Wei

AU - Chung, Cheng Ting

AU - Luo, Guang Li

AU - Chien, Chao-Hsin

PY - 2012

Y1 - 2012

N2 - We fabricated body-tied Ge p-channel fin fieldeffect transistors (p-FinFETs) directly on a Si substrate with a high-?/metal gate stack. This scheme is fully compatible with Si standard processing. The FinFET structure has excellent control on the channel potential and thus can improve the short-channel effect. The diode with p?Si heterojunctions illustrates a remarkably high ION/IOFF > 106 despite the presence of misfit dislocations at the interface. The high-hole-mobility body-tied Ge p-FinFETs with a fin widthWFin of ∼40 nm and a mask channel length LMask of 120 nm depict a driving current of 22 μA/μm at G = ?2 V and a low OFF-current of 3 nA/μm at VG = 2 V. The subthreshold characteristics with a swing of 228 mV/dec and drain-induced barrier lowering of 288 mV/V are demonstrated..

AB - We fabricated body-tied Ge p-channel fin fieldeffect transistors (p-FinFETs) directly on a Si substrate with a high-?/metal gate stack. This scheme is fully compatible with Si standard processing. The FinFET structure has excellent control on the channel potential and thus can improve the short-channel effect. The diode with p?Si heterojunctions illustrates a remarkably high ION/IOFF > 106 despite the presence of misfit dislocations at the interface. The high-hole-mobility body-tied Ge p-FinFETs with a fin widthWFin of ∼40 nm and a mask channel length LMask of 120 nm depict a driving current of 22 μA/μm at G = ?2 V and a low OFF-current of 3 nA/μm at VG = 2 V. The subthreshold characteristics with a swing of 228 mV/dec and drain-induced barrier lowering of 288 mV/V are demonstrated..

KW - Body-tied fin field-effect transistors (FinFETs)

KW - germanium

KW - heterojunctions

KW - high-mobility channel

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U2 - 10.1109/LED.2012.2217473

DO - 10.1109/LED.2012.2217473

M3 - Article

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VL - 33

SP - 1678

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JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 12

M1 - 6353504

ER -

Body-tied germanium FinFETs directly on a silicon substrate

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Keywords

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