Bi2O2Se-Based True Random Number Generator for Security Applications

Bo Liu*, Ying Feng Chang, Juzhe Li, Xu Liu, Le An Wang, Dharmendra Verma, Hanyuan Liang, Hui Zhu, Yudi Zhao, Lain Jong Li, Tuo Hung Hou, Chao Sung Lai*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations


The fast development of the Internet of things (IoT) promises to deliver convenience to human life. However, a huge amount of the data is constantly generated, transmitted, processed, and stored, posing significant security challenges. The currently available security protocols and encryption techniques are mostly based on software algorithms and pseudorandom number generators that are vulnerable to attacks. A true random number generator (TRNG) based on devices using stochastically physical phenomena has been proposed for auditory data encryption and trusted communication. In the current study, a Bi2O2Se-based memristive TRNG is demonstrated for security applications. Compared with traditional metal-insulator-metal based memristors, or other two-dimensional material-based memristors, the Bi2O2Se layer as electrode with non-van der Waals interface, high carrier mobility, air stability, extreme low thermal conductivity, as well as vertical surface resistive switching shows intrinsic stochasticity and complexity in a memristive true analogue/digital random number generation. Moreover, those analogue/digital random number generation processes are proved to be resilient for machine learning prediction.

Original languageEnglish
Pages (from-to)6847-6857
Number of pages11
JournalACS Nano
Issue number4
StatePublished - 26 Apr 2022


  • BiOSe
  • Diffie-Hellman key exchange
  • Shapley value
  • long short-term memory
  • memristor
  • random telegraph noise
  • true random number generator


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