TY - JOUR
T1 - Bi2O2Se-Based True Random Number Generator for Security Applications
AU - Liu, Bo
AU - Chang, Ying Feng
AU - Li, Juzhe
AU - Liu, Xu
AU - Wang, Le An
AU - Verma, Dharmendra
AU - Liang, Hanyuan
AU - Zhu, Hui
AU - Zhao, Yudi
AU - Li, Lain Jong
AU - Hou, Tuo Hung
AU - Lai, Chao Sung
N1 - Publisher Copyright:
© 2022 The Authors.
PY - 2022/4/26
Y1 - 2022/4/26
N2 - The fast development of the Internet of things (IoT) promises to deliver convenience to human life. However, a huge amount of the data is constantly generated, transmitted, processed, and stored, posing significant security challenges. The currently available security protocols and encryption techniques are mostly based on software algorithms and pseudorandom number generators that are vulnerable to attacks. A true random number generator (TRNG) based on devices using stochastically physical phenomena has been proposed for auditory data encryption and trusted communication. In the current study, a Bi2O2Se-based memristive TRNG is demonstrated for security applications. Compared with traditional metal-insulator-metal based memristors, or other two-dimensional material-based memristors, the Bi2O2Se layer as electrode with non-van der Waals interface, high carrier mobility, air stability, extreme low thermal conductivity, as well as vertical surface resistive switching shows intrinsic stochasticity and complexity in a memristive true analogue/digital random number generation. Moreover, those analogue/digital random number generation processes are proved to be resilient for machine learning prediction.
AB - The fast development of the Internet of things (IoT) promises to deliver convenience to human life. However, a huge amount of the data is constantly generated, transmitted, processed, and stored, posing significant security challenges. The currently available security protocols and encryption techniques are mostly based on software algorithms and pseudorandom number generators that are vulnerable to attacks. A true random number generator (TRNG) based on devices using stochastically physical phenomena has been proposed for auditory data encryption and trusted communication. In the current study, a Bi2O2Se-based memristive TRNG is demonstrated for security applications. Compared with traditional metal-insulator-metal based memristors, or other two-dimensional material-based memristors, the Bi2O2Se layer as electrode with non-van der Waals interface, high carrier mobility, air stability, extreme low thermal conductivity, as well as vertical surface resistive switching shows intrinsic stochasticity and complexity in a memristive true analogue/digital random number generation. Moreover, those analogue/digital random number generation processes are proved to be resilient for machine learning prediction.
KW - BiOSe
KW - Diffie-Hellman key exchange
KW - Shapley value
KW - long short-term memory
KW - memristor
KW - random telegraph noise
KW - true random number generator
UR - http://www.scopus.com/inward/record.url?scp=85127671489&partnerID=8YFLogxK
U2 - 10.1021/acsnano.2c01784
DO - 10.1021/acsnano.2c01784
M3 - Article
C2 - 35333049
AN - SCOPUS:85127671489
SN - 1936-0851
VL - 16
SP - 6847
EP - 6857
JO - ACS Nano
JF - ACS Nano
IS - 4
ER -