Bi2O2Se-Based Memristor-Aided Logic

Bo Liu*, Yudi Zhao, Dharmendra Verma, Le An Wang, Hanyuan Liang, Hui Zhu, Lain Jong Li, Tuo Hung Hou, Chao Sung Lai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The implementation of two-dimensional materials into memristor architectures has recently been a new research focus by taking advantage of their atomic thickness, unique lattice, and physical and electronic properties. Among the van der Waals family, Bi2O2Se is an emerging ternary two-dimensional layered material with ambient stability, suitable band structure, and high conductivity that exhibits high potential for use in electronic applications. In this work, we propose and experimentally demonstrate a Bi2O2Se-based memristor-aided logic. By carefully tuning the electric field polarity of Bi2O2Se through a Pd contact, a reconfigurable NAND gate with zero static power consumption is realized. To provide more knowledge on NAND operation, a kinetic Monte Carlo simulation is carried out. Because the NAND gate is a universal logic gate, cascading additional NAND gates can exhibit versatile logic functions. Therefore, the proposed Bi2O2Se-based MAGIC can be a promising building block for developing next-generation in-memory logic computers with multiple functions.

Original languageEnglish
Pages (from-to)15391–15398
Number of pages8
JournalACS Applied Materials and Interfaces
Volume13
Issue number13
DOIs
StatePublished - Apr 2021

Keywords

  • BiOSe
  • CAFM
  • kinetic Monte Carlo
  • MAGIC
  • RRAM

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