Bistable resistive switching characteristics of poly(2-hydroxyethyl methacrylate) thin film memory devices

Keyphrases

• Memory Device 100%
• Resistive Switching 100%
• Poly(2-hydroxyethyl methacrylate) 100%
• Film Memory 100%
• High Current 33%
• Low Resistance State 33%
• High Resistance State 33%
• Long Retention Time 33%
• Cycle Retention 33%
• Conduction Mechanism 33%
• Current-voltage (I-V) Characteristics 33%
• Sandwich Structure 33%
• Ohmic Behavior 33%
• Switching Properties 33%
• Time-of-flight Secondary Ion Mass Spectrometry (ToF-SIMS) 33%
• Space Charge Limited 33%
• Carbon Filament 33%
• Thin Film Properties 33%
• Carbon Ions 33%

Material Science

• Thin Films 100%
• Film 50%
• Indium Tin Oxide 50%
• Secondary Ion Mass Spectrometry 50%
• Current-Voltage Characteristic 50%