Bistable resistive switching characteristics of poly(2-hydroxyethyl methacrylate) thin film memory devices

Ying Chih Chen; Yan Kuin Su; Chun Yuan Huang; Hsin-Chieh Yu; Chiao Yang Cheng; Tai Hsiang Chang

doi:10.1143/APEX.4.054204

Bistable resistive switching characteristics of poly(2-hydroxyethyl methacrylate) thin film memory devices

Ying Chih Chen^*, Yan Kuin Su, Chun Yuan Huang, Hsin-Chieh Yu, Chiao Yang Cheng, Tai Hsiang Chang

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The switching property of thin film memories with a sandwiched structure of Al/poly(2-hydroxyethyl methacrylate) (PHEMA)/ITO has been demonstrated. In terms of bistable current-voltage (I-V) characteristics, the conduction mechanisms at low and high resistance states were characterized by an ohmic behavior and the space charge limit current dominated, respectively. The resistive switching behavior was explained by the presence of the carbon filaments, which was confirmed by observing the carbon ions diffusing in the PHEMA film in time-of-flight secondary ion mass spectrometry. Our devices have high current on/off (>10³), reliable switching endurance over 500 write-read-erase-read cycles, and long retention time (>10⁴ s).

Original language	English
Journal	Applied Physics Express
Volume	4
Issue number	5
DOIs	https://doi.org/10.1143/APEX.4.054204
State	Published - 1 May 2011

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title = "Bistable resistive switching characteristics of poly(2-hydroxyethyl methacrylate) thin film memory devices",

abstract = "The switching property of thin film memories with a sandwiched structure of Al/poly(2-hydroxyethyl methacrylate) (PHEMA)/ITO has been demonstrated. In terms of bistable current-voltage (I-V) characteristics, the conduction mechanisms at low and high resistance states were characterized by an ohmic behavior and the space charge limit current dominated, respectively. The resistive switching behavior was explained by the presence of the carbon filaments, which was confirmed by observing the carbon ions diffusing in the PHEMA film in time-of-flight secondary ion mass spectrometry. Our devices have high current on/off (>103), reliable switching endurance over 500 write-read-erase-read cycles, and long retention time (>104 s).",

author = "Chen, {Ying Chih} and Su, {Yan Kuin} and Huang, {Chun Yuan} and Hsin-Chieh Yu and Cheng, {Chiao Yang} and Chang, {Tai Hsiang}",

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AU - Chen, Ying Chih

AU - Su, Yan Kuin

AU - Huang, Chun Yuan

AU - Yu, Hsin-Chieh

AU - Cheng, Chiao Yang

AU - Chang, Tai Hsiang

PY - 2011/5/1

Y1 - 2011/5/1

N2 - The switching property of thin film memories with a sandwiched structure of Al/poly(2-hydroxyethyl methacrylate) (PHEMA)/ITO has been demonstrated. In terms of bistable current-voltage (I-V) characteristics, the conduction mechanisms at low and high resistance states were characterized by an ohmic behavior and the space charge limit current dominated, respectively. The resistive switching behavior was explained by the presence of the carbon filaments, which was confirmed by observing the carbon ions diffusing in the PHEMA film in time-of-flight secondary ion mass spectrometry. Our devices have high current on/off (>103), reliable switching endurance over 500 write-read-erase-read cycles, and long retention time (>104 s).

AB - The switching property of thin film memories with a sandwiched structure of Al/poly(2-hydroxyethyl methacrylate) (PHEMA)/ITO has been demonstrated. In terms of bistable current-voltage (I-V) characteristics, the conduction mechanisms at low and high resistance states were characterized by an ohmic behavior and the space charge limit current dominated, respectively. The resistive switching behavior was explained by the presence of the carbon filaments, which was confirmed by observing the carbon ions diffusing in the PHEMA film in time-of-flight secondary ion mass spectrometry. Our devices have high current on/off (>103), reliable switching endurance over 500 write-read-erase-read cycles, and long retention time (>104 s).

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SN - 1882-0778

VL - 4

JO - Applied Physics Express

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Bistable resistive switching characteristics of poly(2-hydroxyethyl methacrylate) thin film memory devices

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