Bipolar Transistors' Holding Phenomena

Shao Chang Huang; Kai Chieh Hsu; Chih Hsuan Lin; Chien Wei Wang; Ching Ho Li; Chih Cherng Liao; Jung Tsun Chuang; Gong Kai Lin; Lin Fan Chen; Chun Chih Chen; Yeh Ning Jou; Jian Hsing Lee; Ke Horng Chen

doi:10.1109/ICCE-Taiwan58799.2023.10226846

Bipolar Transistors' Holding Phenomena

Shao Chang Huang^*, Kai Chieh Hsu, Chih Hsuan Lin, Chien Wei Wang, Ching Ho Li^*, Chih Cherng Liao, Jung Tsun Chuang, Gong Kai Lin, Lin Fan Chen, Chun Chih Chen, Yeh Ning Jou, Jian Hsing Lee, Ke Horng Chen^*

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Silicon Controlled Rectifier (SCR) is often applied for Electrostatic Discharge (ESD) protections. SCR holding voltage is requested to be larger than the integrated circuit (IC) operation voltage because SCR owns the latch-up phenomena. Bipolar transistors are more frequently than SCR to be used as ESD protections. Large holding voltages are also often requested for bipolar transistors. SCR owns the positive feedback circuit characteristics so it owns latch-up properties. However, bipolar transistors don't have the positive feedback circuit so the latch-up event should not occur. The latch-up characteristics in SCR and not in bipolar transistors are discovered well in this study through the silicon verifications.

Original language	English
Title of host publication	2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	221-222
Number of pages	2
ISBN (Electronic)	9798350324174
DOIs	https://doi.org/10.1109/ICCE-Taiwan58799.2023.10226846
State	Published - 2023
Event	2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Pingtung, Taiwan Duration: 17 Jul 2023 → 19 Jul 2023

Publication series

Name	2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings

Conference

Conference	2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023
Country/Territory	Taiwan
City	Pingtung
Period	17/07/23 → 19/07/23

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10.1109/ICCE-Taiwan58799.2023.10226846

Cite this

Huang, S. C., Hsu, K. C., Lin, C. H., Wang, C. W., Li, C. H., Liao, C. C., Chuang, J. T., Lin, G. K., Chen, L. F., Chen, C. C., Jou, Y. N., Lee, J. H., & Chen, K. H. (2023). Bipolar Transistors' Holding Phenomena. In 2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings (pp. 221-222). (2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICCE-Taiwan58799.2023.10226846

@inproceedings{c6abc23c5a6349dba189a302e0b5d875,

title = "Bipolar Transistors' Holding Phenomena",

abstract = "Silicon Controlled Rectifier (SCR) is often applied for Electrostatic Discharge (ESD) protections. SCR holding voltage is requested to be larger than the integrated circuit (IC) operation voltage because SCR owns the latch-up phenomena. Bipolar transistors are more frequently than SCR to be used as ESD protections. Large holding voltages are also often requested for bipolar transistors. SCR owns the positive feedback circuit characteristics so it owns latch-up properties. However, bipolar transistors don't have the positive feedback circuit so the latch-up event should not occur. The latch-up characteristics in SCR and not in bipolar transistors are discovered well in this study through the silicon verifications.",

author = "Huang, {Shao Chang} and Hsu, {Kai Chieh} and Lin, {Chih Hsuan} and Wang, {Chien Wei} and Li, {Ching Ho} and Liao, {Chih Cherng} and Chuang, {Jung Tsun} and Lin, {Gong Kai} and Chen, {Lin Fan} and Chen, {Chun Chih} and Jou, {Yeh Ning} and Lee, {Jian Hsing} and Chen, {Ke Horng}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 ; Conference date: 17-07-2023 Through 19-07-2023",

year = "2023",

doi = "10.1109/ICCE-Taiwan58799.2023.10226846",

language = "English",

series = "2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "221--222",

booktitle = "2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings",

address = "美國",

}

Huang, SC, Hsu, KC, Lin, CH, Wang, CW, Li, CH, Liao, CC, Chuang, JT, Lin, GK, Chen, LF, Chen, CC, Jou, YN, Lee, JH & Chen, KH 2023, Bipolar Transistors' Holding Phenomena. in 2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings. 2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 221-222, 2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023, Pingtung, Taiwan, 17/07/23. https://doi.org/10.1109/ICCE-Taiwan58799.2023.10226846

Bipolar Transistors' Holding Phenomena. / Huang, Shao Chang; Hsu, Kai Chieh; Lin, Chih Hsuan et al.
2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. p. 221-222 (2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Bipolar Transistors' Holding Phenomena

AU - Huang, Shao Chang

AU - Hsu, Kai Chieh

AU - Lin, Chih Hsuan

AU - Wang, Chien Wei

AU - Li, Ching Ho

AU - Liao, Chih Cherng

AU - Chuang, Jung Tsun

AU - Lin, Gong Kai

AU - Chen, Lin Fan

AU - Chen, Chun Chih

AU - Jou, Yeh Ning

AU - Lee, Jian Hsing

AU - Chen, Ke Horng

PY - 2023

Y1 - 2023

N2 - Silicon Controlled Rectifier (SCR) is often applied for Electrostatic Discharge (ESD) protections. SCR holding voltage is requested to be larger than the integrated circuit (IC) operation voltage because SCR owns the latch-up phenomena. Bipolar transistors are more frequently than SCR to be used as ESD protections. Large holding voltages are also often requested for bipolar transistors. SCR owns the positive feedback circuit characteristics so it owns latch-up properties. However, bipolar transistors don't have the positive feedback circuit so the latch-up event should not occur. The latch-up characteristics in SCR and not in bipolar transistors are discovered well in this study through the silicon verifications.

AB - Silicon Controlled Rectifier (SCR) is often applied for Electrostatic Discharge (ESD) protections. SCR holding voltage is requested to be larger than the integrated circuit (IC) operation voltage because SCR owns the latch-up phenomena. Bipolar transistors are more frequently than SCR to be used as ESD protections. Large holding voltages are also often requested for bipolar transistors. SCR owns the positive feedback circuit characteristics so it owns latch-up properties. However, bipolar transistors don't have the positive feedback circuit so the latch-up event should not occur. The latch-up characteristics in SCR and not in bipolar transistors are discovered well in this study through the silicon verifications.

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U2 - 10.1109/ICCE-Taiwan58799.2023.10226846

DO - 10.1109/ICCE-Taiwan58799.2023.10226846

M3 - Conference contribution

AN - SCOPUS:85174888519

T3 - 2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings

SP - 221

EP - 222

BT - 2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023

Y2 - 17 July 2023 through 19 July 2023

ER -

Huang SC, Hsu KC, Lin CH, Wang CW, Li CH, Liao CC et al. Bipolar Transistors' Holding Phenomena. In 2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. p. 221-222. (2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings). doi: 10.1109/ICCE-Taiwan58799.2023.10226846

Bipolar Transistors' Holding Phenomena

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