Bipolar switching characteristics of low-power Geo resistive memory

C. H. Cheng; P. C. Chen; S. L. Liu; T. L. Wu; H. H. Hsu; Albert Chin; F. S. Yeh

doi:10.1016/j.sse.2011.04.010

Bipolar switching characteristics of low-power Geo resistive memory

C. H. Cheng, P. C. Chen, S. L. Liu, T. L. Wu, H. H. Hsu, Albert Chin, F. S. Yeh

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeO _x dielectric. This cost-effective Ni/GeO _x /TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM.

Original language	English
Pages (from-to)	90-93
Number of pages	4
Journal	Solid-State Electronics
Volume	62
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2011.04.010
State	Published - 1 Aug 2011

Keywords

Germanium oxide (GeO )
Resistive random access memory (RRAM)

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10.1016/j.sse.2011.04.010

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title = "Bipolar switching characteristics of low-power Geo resistive memory",

abstract = " We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeO x dielectric. This cost-effective Ni/GeO x /TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM.",

keywords = "Germanium oxide (GeO ), Resistive random access memory (RRAM)",

author = "Cheng, {C. H.} and Chen, {P. C.} and Liu, {S. L.} and Wu, {T. L.} and Hsu, {H. H.} and Albert Chin and Yeh, {F. S.}",

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T1 - Bipolar switching characteristics of low-power Geo resistive memory

AU - Cheng, C. H.

AU - Chen, P. C.

AU - Liu, S. L.

AU - Wu, T. L.

AU - Hsu, H. H.

AU - Chin, Albert

AU - Yeh, F. S.

PY - 2011/8/1

Y1 - 2011/8/1

N2 - We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeO x dielectric. This cost-effective Ni/GeO x /TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM.

AB - We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeO x dielectric. This cost-effective Ni/GeO x /TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM.

KW - Germanium oxide (GeO )

KW - Resistive random access memory (RRAM)

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M3 - Article

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SN - 0038-1101

VL - 62

SP - 90

EP - 93

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

Bipolar switching characteristics of low-power Geo resistive memory

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Keywords

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