Bipolar resistive switching characteristics of tungsten-doped indium–zinc oxide conductive-bridging random access memory

Kai Jhih Gan, Po-Tsun Liu*, Sheng Jie Lin, Dun Bao Ruan, Ta Chun Chien, Yu Chuan Chiu, Simon M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The purpose of this work is to develop a reliable amorphous tungsten-doped indium-zinc oxide based conductive-bridging random access memory (CBRAM). The device with Cu/TiW/InWZnO/Pt structure exhibits stable bipolar resistive switching behavior. The device also shows good non-volatile memory characteristics, such as low operation voltage, on/off resistance ratio (∼102), high switching endurance (more than 5×102 cycles). The temperature coefficient of resistance in the conductive filament confirms that an electro-chemical metallization (ECM) based conduction is observed in the InWZnO device. Furthermore, the temperature retention characteristics and the current transport mechanisms are also investigated. According to our experiments, we propose a model to explain the resistive switching phenomenon observed in our devices. These results have given a great potential for the transparent amorphous oxide semiconductor (TAOS)-based material utilizing in CBRAM stacks and integrating into the display circuits for future memory-in-pixel applications.

Original languageEnglish
Pages (from-to)226-230
Number of pages5
JournalVacuum
Volume166
DOIs
StatePublished - 1 Aug 2019

Keywords

  • Conductive-bridging random access memory (CBRAM)
  • Indium-tungsten-zinc-oxide
  • Non-volatile memories (NVM)
  • Physical vapor deposition

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