Abstract
The purpose of this work is to develop a reliable amorphous tungsten-doped indium-zinc oxide based conductive-bridging random access memory (CBRAM). The device with Cu/TiW/InWZnO/Pt structure exhibits stable bipolar resistive switching behavior. The device also shows good non-volatile memory characteristics, such as low operation voltage, on/off resistance ratio (∼102), high switching endurance (more than 5×102 cycles). The temperature coefficient of resistance in the conductive filament confirms that an electro-chemical metallization (ECM) based conduction is observed in the InWZnO device. Furthermore, the temperature retention characteristics and the current transport mechanisms are also investigated. According to our experiments, we propose a model to explain the resistive switching phenomenon observed in our devices. These results have given a great potential for the transparent amorphous oxide semiconductor (TAOS)-based material utilizing in CBRAM stacks and integrating into the display circuits for future memory-in-pixel applications.
Original language | English |
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Pages (from-to) | 226-230 |
Number of pages | 5 |
Journal | Vacuum |
Volume | 166 |
DOIs | |
State | Published - 1 Aug 2019 |
Keywords
- Conductive-bridging random access memory (CBRAM)
- Indium-tungsten-zinc-oxide
- Non-volatile memories (NVM)
- Physical vapor deposition