Bipolar conductivity in amorphous HfO2

D. R. Islamov; V. A. Gritsenko; C. H. Cheng; Albert Chin

doi:10.1063/1.3626599

Bipolar conductivity in amorphous HfO₂

D. R. Islamov^*, V. A. Gritsenko, C. H. Cheng, Albert Chin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

This study calculates the contribution of electrons and holes to HfO ₂ conductivity in Si/HfO₂/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO₂, allowing HfO₂ to exhibit two-band conductivity.

Original language	English
Article number	072109
Journal	Applied Physics Letters
Volume	99
Issue number	7
DOIs	https://doi.org/10.1063/1.3626599
State	Published - 15 Aug 2011

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@article{3c633b6fe10146bf87266766c597d097,

title = "Bipolar conductivity in amorphous HfO2",

abstract = "This study calculates the contribution of electrons and holes to HfO 2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity.",

author = "Islamov, {D. R.} and Gritsenko, {V. A.} and Cheng, {C. H.} and Albert Chin",

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AU - Islamov, D. R.

AU - Gritsenko, V. A.

AU - Cheng, C. H.

AU - Chin, Albert

PY - 2011/8/15

Y1 - 2011/8/15

N2 - This study calculates the contribution of electrons and holes to HfO 2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity.

AB - This study calculates the contribution of electrons and holes to HfO 2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity.

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U2 - 10.1063/1.3626599

DO - 10.1063/1.3626599

M3 - Article

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SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 072109

ER -

Bipolar conductivity in amorphous HfO₂

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